Effect of on band alignment of compressively strained Ga1−xInxNy As1−y−zSbz/GaAs quantum well structures

Aissat, A.; Nacer, S.; Seghilani, Mohamed; Vilcot, Jean-Pierre

doi:10.1016/j.physe.2010.06.016

Cited by 11 publications

(4 citation statements)

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“…The goal of this paper is to extend the approach to quaternary materials and describe corresponding experimental results. In the simulations presented next we just considered a distribution ( ) x G (Nitrogen related) and let y ( Sb ) as a fixed parameter.3 Numerical results and discussionsIn our calculations, the N impurity level is taken with the form x the calculations[10,23].Figure 1shows the schematic diagram of the band lineup of…”

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confidence: 99%

Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors

Oriaku

Spencer

et al. 2017

J. Nanophoton

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In this paper, we calculate the luminescence of the dilute quaternary InAs(N,Sb). The incorporation of N leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation and further reduces the bandgap. This is thus extremely relevant for devices operating in the mid-infrared (MIR) spectral range from 3 to 5 µm. In order to describe this system, the theory starts with the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spectra, including plasma screening, bandgap renormalization and excitonic enhancements. Direct application of the equations leads to good agreement with some recent experimental data.

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confidence: 99%

Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors

Oriaku

Spencer

et al. 2017

J. Nanophoton

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“…The bandgap energy of GaAs 1-x-y P x N y alloys is calculated using the well-known confirmed quadratic form, typical of GaN y As 1Ày and GaN y P 1Ày ternary alloys. 19,20,[23][24][25][26] Table 2 shows the parameters for ternary dilute nitrides. 23,24…”

Section: Theoretical Modelmentioning

confidence: 99%

“…C MN is the interaction force between the nitrogen state E N and the conduction band of undisturbed N‐free E M ( k ). The bandgap energy of GaAs 1‐ x‐y P x N y alloys is calculated using the well‐known confirmed quadratic form, typical of GaN y As 1−y and GaN y P 1−y ternary alloys 19,20,23‐26 . Table 2 shows the parameters for ternary dilute nitrides 23,24 …”

Section: Theoretical Modelmentioning

confidence: 99%

Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

Aissat

Chenini

Nacer

et al. 2021

Intl J of Energy Research

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Summary This effort is founded on the modeling and simulation of the GaAsPN/GaP quantum dot (QD) solar cell. This quaternary alloy is one of the III‐V semiconductors, which gained importance in the recent years for optoelectronic applications. This importance comes from the fact that the quaternary GaAsPN can be a well‐grown lattice matched to GaP and Si substrates and to the bandgap that can be decreased drastically with the incorporation of nitrogen and arsenic into GaP, improving consequently the absorption and the wavelengths near the red part. These qualities make GaAsPN a good candidate for the growth on the Si substrate and low‐cost solar cell fabrication. The optical properties of GaAsPN/GaP QDs, such as strain, critical thickness, bandgap energy, the external quantum efficiency, and absorption coefficient, have been reported. The heterostructures consist of GaAs0.18P0.814N0.006 QDs separated by GaP barrier layers. The width and thickness of QDs are about 5 and 5 nm, respectively. Our results have been shown that 20 GaAs0.18P0.814N0.006/GaP QD layers produce a short‐circuit current of about 3.55 mA/cm2 and an efficiency of about 7.5%. In addition, we will be able to extend the absorption edge of a GaP solar cell from 0.48 μm to 0.5 μm for the same QD number layers inserted. The temperature effect on efficiency is considered.

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“…The theory of elasticity allows us to calculate the stress state of a film using the elastic constant. The various strains induced by the lattice mismatch are calculated from the following equation [5]. …”

Section: Theorymentioning

confidence: 99%

Development and Simulation of a Structure Based on CuIn1-xGaxSe2 Semiconductors Alloys for a New Generation of Photovoltaic Cells

Aissat¹,

Fathi²,

Vilcot³

2012

Energy Procedia

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The aim of our study is the development and simulation of thin films structure based on CuIn 1-x Ga x Se 2 semiconductors alloys to improve the conversion efficiency of solar cells. We studied and simulated the variation effect of the Gallium concentration on some physical and electrical properties (lattice parameter, strain, energy gap, refractive index, absorption coefficient and J (V) characteristic), this in order to optimize the best possible performances for solar cells. Then, we studied the influence of surface state density and temperature on solar devices characteristics. For better performance of our structure based on CuIn1-xGaxSe2, the concentration of gallium must be less than 40% and this to avoid the lattice mismatch with CdS buffer layer. We have demonstrated by simulation models the possibility for efficiency to reach 22% in the case of CuIn 1-x Ga x Se 2 thin films solar cells.

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Effect of on band alignment of compressively strained Ga1−xInxNy As1−y−zSbz/GaAs quantum well structures

Cited by 11 publications

References 40 publications

Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors

Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors

Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

Development and Simulation of a Structure Based on CuIn1-xGaxSe2 Semiconductors Alloys for a New Generation of Photovoltaic Cells

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