Effect of O2 flow rate in the annealing process on metal–insulator transition of vanadium oxide thin films

Li, Na; Hu, Ming; Liang, Jiran; Liu, Xing; Wu, Mai-Jun

doi:10.1007/s10854-015-3310-y

Cited by 8 publications

(4 citation statements)

References 28 publications

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“…The phase transition amplitude of the samples is similar, and the sheet resistance at room temperature (r L ) and high temperature (r H ) decrease with increasing thickness. To characterize the metalsemiconductor phase transition properties of the samples in details, the phase transition temperature (T c ), 28 thermal hysteresis loop width (H) 29 and phase transition amplitude (B) 30 were calculated according to the resistance-temperature curves by the equation:…”

Section: Resultsmentioning

confidence: 99%

Research of Optical Performance of VO₂/V₂O₅ Composite Film with Ultra-High Luminous Transmittance

Liang¹,

Fan²,

Su³

et al. 2020

ECS J. Solid State Sci. Technol.

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The optical performance of vanadium dioxide film is important for the application in smart windows. In this work, we prepared ultra-thin vanadium oxide films with thickness from 30 nm to 120 nm and investigated the influence of thickness on the optical performance of ultra-thin vanadium oxide films. The experimental results show that the composite of vanadium pentoxide (V 2 O 5 ) with a low refractive index can improve luminous transmittance, which reaches 66.32% at the film thickness of 30 nm. The transmittance of metallic phase ultra-thin vanadium oxide film in the visible band is higher than that in the semiconductor phase, which leads to cross-points in transmittance curve and negative solar energy modulation. With the increase of thickness, the position of cross-points in transmittance curve shifts to long-wavelength, and the absolute value of negative solar energy modulation increases from 0.73% to 1.5%, which is related to the principle of optical interference. These conclusions will inspire ultra-thin vanadium dioxide film in improving the solar energy modulation of smart windows under the high luminous transmittance.

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Section: Resultsmentioning

confidence: 99%

Research of Optical Performance of VO₂/V₂O₅ Composite Film with Ultra-High Luminous Transmittance

Liang¹,

Fan²,

Su³

et al. 2020

ECS J. Solid State Sci. Technol.

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“…To compare the MIT properties of the different samples, the phase transition magnitudes and the transition temperatures of the VO 2 thin films are defined according to previous studies. 25,30 The phase transition magnitude ( R) is defined as: R = R L R H [9] where R L and R H are the sheet resistances at 28 • C and 90 • C, respectively. R L is the maximum sheet resistance before the transition, and R H is the minimum sheet resistance after the transition.…”

Section: Mit Characteristic Of the Filmsmentioning

confidence: 99%

Rapid Thermal Oxidation of Sputtering Power Dependent Vanadium Thin Films for VO₂Thin Films Preparation

Liang¹,

Zhao²,

Guo³

et al. 2018

ECS J. Solid State Sci. Technol.

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Rapid thermal oxidation of sputtering power dependent vanadium thin films for VO 2 thin films preparation is investigated. Metallic vanadium thin films are deposited by direct current magnetron sputtering at different sputtering power. They are characterized by the atomic force microscope (AFM) and the field emission-scanning electron microscope (FE-SEM). In our experiment, we increase the sputtering power while reducing the sputtering time to maintain the same thickness of the film. In this process, the particle size of metallic vanadium increases. The vanadium thin films are oxidized at the same annealing conditions by rapid thermal annealing. X-ray diffraction (XRD) results indicate there is polycrystalline VO 2 in oxidation products of the metallic vanadium with large average particle radius. Surface morphology and metal-to-insulator transition (MIT) properties of VO 2 thin films are characterized. When average particle radius of the metallic vanadium is 8.78 nm, the VO 2 thin film has the largest particles and maximum phase transition magnitude. These results reveal the relationship of sputtering power and the particle size of vanadium thin films, and illustrate the effect of the particle size of vanadium thin films on VO 2 thin films preparation through the oxide growth rate law for the oxidation of spherical particles.

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“…Among various resistivity-temperature sensitive resistors (i.e., thermistors), the ones showing a positive temperature coefficient (PTC) or negative temperature coefficient (NTC) effect are extensively applied in industrial and domestic devices for the temperature measurement, automatic control, temperature compensation and voltage stabilization, owing to their high sensitivity and reliability. Meanwhile, the transition metal oxides such as VO 2 and V 2 O 3 with the metal-insulator transition feature are also of interest in practical applications and theoretical research [1][2][3][4][5]. In the traditional PTC ceramic thermistors, BaTiO 3 -based compounds are the most important ones for the practical applications [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Abnormal resistivity-temperature characteristic in fluorite type Bi/K-substituted ceria ceramics

Wang

Zhang

et al. 2016

J Mater Sci: Mater Electron

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Bi/K-substituted CeO 2 (Bi x K y CeO 2?d , x and y are 0.2 or 0.3) ceramics were prepared by a wet chemical route. The Bi x K y CeO 2?d ceramics have cubic fluorite crystalline structure and show an abnormal resistivitytemperature characteristic in which the resistivities increase sharply at 150-190°C. In situ XRD investigations revealed that the Bi 0.3 K 0.2 CeO 2.55 ceramic maintained the cubic fluorite structure and did not show any detectable phase transition excepting the lattice parameters increased during heating from 25 to 220°C. The complex impedance and electrical modulus analysis were performed to reveal the abnormal resistivity-temperature effect. The electrical properties are attributed to the grain effect instead of the grain-boundary effect. The abnormal resistivity-temperature characteristic was proposed to originate from the transition of conduction models from a long-range conduction to a localized conduction.

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Effect of O2 flow rate in the annealing process on metal–insulator transition of vanadium oxide thin films

Cited by 8 publications

References 28 publications

Research of Optical Performance of VO₂/V₂O₅ Composite Film with Ultra-High Luminous Transmittance

Research of Optical Performance of VO₂/V₂O₅ Composite Film with Ultra-High Luminous Transmittance

Rapid Thermal Oxidation of Sputtering Power Dependent Vanadium Thin Films for VO₂Thin Films Preparation

Abnormal resistivity-temperature characteristic in fluorite type Bi/K-substituted ceria ceramics

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Effect of O2 flow rate in the annealing process on metal–insulator transition of vanadium oxide thin films

Cited by 8 publications

References 28 publications

Research of Optical Performance of VO2/V2O5 Composite Film with Ultra-High Luminous Transmittance

Research of Optical Performance of VO2/V2O5 Composite Film with Ultra-High Luminous Transmittance

Rapid Thermal Oxidation of Sputtering Power Dependent Vanadium Thin Films for VO2Thin Films Preparation

Abnormal resistivity-temperature characteristic in fluorite type Bi/K-substituted ceria ceramics

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Research of Optical Performance of VO₂/V₂O₅ Composite Film with Ultra-High Luminous Transmittance

Research of Optical Performance of VO₂/V₂O₅ Composite Film with Ultra-High Luminous Transmittance

Rapid Thermal Oxidation of Sputtering Power Dependent Vanadium Thin Films for VO₂Thin Films Preparation