Effect of normal strain and external electric field on electronic properties of the GeC bilayer: A first-principles study

Abstract

The electronic properties of the GeC bilayer with different stacking patterns are investigated using density functional theory. A different behavior shows up when applying normal strain and electric field (E-field). Under normal strain, the bandgap becomes very elastic and presents an indirect-to-direct bandgap transition. By applying the E-field, the intrinsic bandgap swiftly reduces to zero. The major modulation of the bandgap is mainly due to the migration of Ge-p orbitals in the conduction band. Our results reveal the flexible electronic properties of the GeC bilayer, which would provide a theoretical reference for the development of the GeC bilayer.

Electric Field-Tunable Structural Phase Transitions in Monolayer Tellurium

“…Electronic property modulation on low-dimensional materials like 2D materials is a hot issue and has been widely investigated. 15 − 26 For instance, application of an electric field has been found to modulate the band gap of the GeC bilayer. 15 As reported, an external electric field can also tune the band gap of the SnC/BAs heterostructure linearly and induce a semiconductor-to-metal transition in the presence of a strong electric field.…”

“… 15 − 26 For instance, application of an electric field has been found to modulate the band gap of the GeC bilayer. 15 As reported, an external electric field can also tune the band gap of the SnC/BAs heterostructure linearly and induce a semiconductor-to-metal transition in the presence of a strong electric field. 16 Moreover, type-I to type-II or indirect-to-nearly direct transition has been found with an external electric field applied to a 2D type-I α-tellurene/MoS 2 heterostructure.…”