Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds

Bousbih, F.; Bouzid, S.; Chtourou, R.; Charfi, F. F.; Harmand, J. C.; Ungaro, G.

doi:10.1016/s0928-4931(02)00075-9

Cited by 27 publications

(18 citation statements)

References 18 publications

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“…Thus, the reduction in the band gap energy, with respect to the corresponding host non-nitride alloys, ranges from 105 to 250 meV/ % N in various dilute nitride III-V systems. 2,3,6,8,15,18,22,23 It may be noted that, in comparison to other III-As based N alloys, the redshift in the emission wavelength is greater in Sb or mixed Sb-As based system. A similar conclusion has been drawn by Harmand et al 24 where they report the reductions of 127, 124, and 151 meV% N contributions due only to N in the annealed GaAsN, InGaAsN, and GaAsSbN systems, respectively, relative to GaAs after carefully excluding the strain effects.…”

Section: Discussionmentioning

confidence: 93%

“…Assuming the low temperature PL peak energy to be the band gap of the QWs, the experimental PL peak energy data for different N concentrations has been fitted using the following energy dispersion relation from the BAC model: [16][17][18] …”

Section: Resultsmentioning

confidence: 99%

“…E N = 1.65 eV above the valence band edge, and V is typically in the range of 2.4-2.7 eV for GaAsN and InGaAsN material systems. [16][17][18] The N energy level is assumed to be independent of the temperature as well as in the variation in the Sb composition. The BAC parameters of E N and V of 1.65 and 3.9 eV, respectively, are found to provide a best fit to our PL peak energy variation with N%.…”

Section: Resultsmentioning

confidence: 99%

“…18 from the host GaAs, 18 InGaAsN: ϳ314 meV for N ϳ 2.5%, 2 ϳ180 meV for ϳ1.7% of N with respect to InGaAs, 22 GaInNAsSb: ϳ50 meV for N ϳ 0.6% with reference to GaInNAs, 3 and ϳ320 meV for ϳ1.5% N in GaSbN from the host GaSb. 23 This stated range of band gap reduction due to N is made based on similar compositions in both the non-nitride and nitride materials to get a better estimate of reduction due to N incorporation.…”

Section: Discussionmentioning

confidence: 97%

See 3 more Smart Citations

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Nunna¹,

Iyer²,

Wu³

et al. 2007

Journal of Applied Physics

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In this work, the effects of N incorporation on the optical properties of GaAsSbN / GaAs single quantum wells ͑SQWs͒ have been investigated using temperature, excitation, and magnetic dependencies of photoluminescence ͑PL͒ characteristics. These layers were grown in an elemental solid source molecular beam epitaxy system with a rf plasma N source. The N concentrations in the range of 0.5%-2.5% were investigated in this study. The SQW with N ϳ 0.5% exhibits a behavior similar to that in an intermediate regime where the contributions from the localized states in the band gap are dominant. The temperature and excitation dependencies of the PL characteristics indicate that for the N concentration of 0.9% and above, the alloy behavior is analogous to that of a regular alloy and the changes in optical properties are only marginal. The conduction band effective mass ͑m eff ͒ values computed from the magnetophotoluminescence spectra using a variational formalism and the band anticrossing model are in good agreement and indicate enhanced values of m eff . However, there is no significant variation in m eff values of QWs for N ജ 0.9%. Small redshift of about 30-50 meV for the temperature variations from 10 to 300 K in conjunction with unusually small blueshift observed in the excitation dependence of PL for N ജ 0.9% indicate that this system holds a great promise for laser applications at 1.55 m and beyond.

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Section: Discussionmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 97%

See 2 more Smart Citations

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Nunna¹,

Iyer²,

Wu³

et al. 2007

Journal of Applied Physics

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“…The large redshift measured for dilute GaN x Sb 1Àx and GaN x As 1Àx , in turn, makes these alloys interesting for midand long-wavelength infrared applications. [8][9][10][11][12][13] Recently, GaN-based HMAs have been proposed as good candidates for photoelectrochemical (PEC) cells for solar water dissociation. There are two key requirements in terms of the electronic band structure for the semiconductor materials to be suitable for solar water splitting applications.…”

mentioning

confidence: 99%

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

Segercrantz

Min

et al. 2015

Applied Physics Letters

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In this letter, we study the optical properties of GaN1−xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 °C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1−xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications.

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Theoretical Study of Quantum Well GaAsP(N)/GaP Structures for Solar Cells

Chenini

Aissat

2020

Advanced Structured Materials

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Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds

Cited by 27 publications

References 18 publications

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

Theoretical Study of Quantum Well GaAsP(N)/GaP Structures for Solar Cells

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