Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

Tian, Lu; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peng

doi:10.1016/j.spmi.2016.11.054

Cited by 15 publications

(7 citation statements)

References 40 publications

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“…Indium-tin oxide (ITO) is widely utilized in light-emitting diodes (LEDs), [1][2][3] thin-film transistors (TFTs), [4][5][6] and liquid crystal displays (LCDs) [7][8][9] owing to its excellent light transmission in the visible region and good electrical conduction in current spreading. Many techniques have been developed to prepare ITO films, such as thermal evaporation, electron beam evaporation, chemical vapor deposition (CVD), and DC magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

Wet etching mechanism and crystallization of indium–tin oxide layer for application in light-emitting diodes

Kong

Tseng

et al. 2017

Jpn. J. Appl. Phys.

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In the article, we describe the etching mechanism of indium-tin oxide (ITO) film, which was wet-etched using a solution of hydrochloric acid (HCl) and ferric chloride (FeCl 3 ). The etching mechanism is analyzed at various etching durations of ITO films by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and selective area diffraction (SAD) analysis. In comparison with the crystalline phase of SnO 2 , the In 2 O 3 phase can be more easily transformed to In 3+ and can form an inverted conical structure during the etching process. By adjusting the etching duration, the residual ITO is completely removed to show a designed pattern. This is attributed to the negative Gibbs energy of In 2 O 3 transformed to In 3+ . The result also corresponds to the finding of energy-dispersive X-ray spectroscopy (EDS) analysis that the Sn/In ratio increases with increasing etching duration.

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Section: Introductionmentioning

confidence: 99%

Wet etching mechanism and crystallization of indium–tin oxide layer for application in light-emitting diodes

Kong

Tseng

et al. 2017

Jpn. J. Appl. Phys.

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“…3d) revealed the characteristic peaks of In-N and O-N bonds at 396.4 eV and 399.7 eV, respectively. 28 The elemental analysis demonstrated that 49.8% of the nitrogen peak was attributed to the In-N bonds and 50.1% was assigned to the In-O bonds, confirming the successful incorporation of nitrogen into the In 2 O 3 nanostructure. It is also expected that nitrogen incorporation has also affected the In 3d core level spectra of In 2 O 3 and In 2 O 3 (N 2 ) ( Fig.…”

Section: Materials Characterizationmentioning

confidence: 80%

Heterostructured plasmonic memristors with tunable opto-synaptic functionalities

et al. 2021

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“…In consequence, an acceptor impurity level Ea was formed in the nitrogen-doped ITO TFSGs, as shown in Fig3c. The donor impurity level E d will compensate a part of the acceptor impurity level E a , which causes the Fermi energy level (E F ) of the nitrogen-doped ITO TFSGs to shift closer to the E v with the increase of NPPs [22] , as shown in Fig. 3c.…”

Section: Resultsmentioning

confidence: 95%

“…3a shows the XPS valence band spectra of the different ITO TFSGs, and the mechanism of nitrogen incorporation is revealed. A peak at the binding energy of 4.65eV is observed, which might be due to the In5p-O2p interaction and correspond to the orbital state of p-like valence band [21,22] . The peak at 4.65 eV shifts to 3.5 eV with the increase of NPPs, which can be attributed to a weaker electronegativity of nitrogen (3.04) than that of oxygen (3.44).…”

Section: Resultsmentioning

confidence: 97%

Investigation on Sensing and Stability of Nitrogen-doped ITO Thin-film Strain Gauges at High Temperatures

Liu¹,

Liang²,

Li³

et al. 2021

Preprint

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Nitrogen-doped indium tin oxide (ITO) has been applied in the thin-film strain gauges (TFSGs) due to their high stability, excellent piezoresistivity and antioxidation at elevated temperatures. However, the mechanism on the sensing and stability of the nitrogen-doped ITO TFSGs at high temperatures was not comprehensively clarified. In this work, various ITO TFSGs were fabricated by RF magnetron sputtering with different nitrogen partial pressures (NPPs) of 5%~40%. The elemental composition and band structures of the ITO TFSGs were examined by the energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS), respectively. Results show that the Fermi energy level shifts closer to the valence band maximum energy (Ev) gradually with the growth of NPPs, causing a reduction in the number of electrons ionized to the conduction band. The smallest content change rates of nitrogen (3.8%) and oxygen (1.6%) after subjecting to the thermal strain test were observed in the 20%N2 ITO TFSG. In consequence, the 20%N2 ITO TFSG exhibits the lowest resistance drift rate (DR) at high temperatures due to its stable elemental composition. Moreover, we found that the band structures and elemental composition of the ITO TFSGs are the main factors affecting their piezoresistive response at different temperatures. The band structures play a major role in the gauge factors (GFs) of the ITO TFSGs at room temperature and 600 ℃. The element variation takes responsibility for the different GFs of the ITO TFSGs at 800℃, 900℃ and 1000℃. In addition, the piezoresistive stability is also dependent on the elemental composition affected by the dynamic equilibrium between the diffusion amount of oxygen and the escape number of the nitrogen in the ITO thin films at high temperatures.

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Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

Cited by 15 publications

References 40 publications

Wet etching mechanism and crystallization of indium–tin oxide layer for application in light-emitting diodes

Wet etching mechanism and crystallization of indium–tin oxide layer for application in light-emitting diodes

Heterostructured plasmonic memristors with tunable opto-synaptic functionalities

Investigation on Sensing and Stability of Nitrogen-doped ITO Thin-film Strain Gauges at High Temperatures

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