Effect of nickel ions on sensitivity of In2O3 thin film sensors to NO2

Bogdanov, P; Ivanovskaya, M. I.; Comini, Elisabetta; Faglia, Guido

doi:10.1016/s0925-4005(99)00157-4

Cited by 47 publications

(28 citation statements)

References 8 publications

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“…The addition of metal oxide is known to improve the gas sensing property. The effect of NiO as a dopant has been reported as a grain growth inhibitor [23,24]. at 600 • C for 6 h as a function of operating temperature.…”

Section: Resultsmentioning

confidence: 99%

H2S sensing characteristics of La0.7Pb0.3Fe0.4Ni0.6O3 based nanocrystalline thick film gas sensor

Jagtap¹,

Kadu²,

Sangawar

et al. 2008

Sensors and Actuators B: Chemical

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Section: Resultsmentioning

confidence: 99%

H2S sensing characteristics of La0.7Pb0.3Fe0.4Ni0.6O3 based nanocrystalline thick film gas sensor

Jagtap¹,

Kadu²,

Sangawar

et al. 2008

Sensors and Actuators B: Chemical

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“…The nature of thin films could be either amorphous or polycrystalline at its best, depending on the materials used and the method of preparation (Arshak and Hogarth 1986;Atanassova et al 2001;Bogdanov et al 1999;Lee et al 1989). For example, as-deposited or as-grown Ta 2 O 5 has amorphous structure due to low temperature fabrication and the films may crystallise during the high temperature post-formation processes (Atanassova et al 2001).…”

Section: Methodsmentioning

confidence: 99%

“…It has been reported that In 2 O 3 thin films, prepared by electron beam evaporation, consist of mostly polycrystalline grains of about 0.1-1 lm in size with a cubic lattice constant about 10.10 Å (Lee et al 1989). Under heat treatment, In 2 O 3 loses part of lattice oxygen with the formation of lattice defects-F-centres and In 2+ ions (Bogdanov et al 1999). Transmission electron microscopy studies revealed an amorphous character of thermally evaporated SiO thin films (Arshak and Hogarth 1986).…”

Section: Methodsmentioning

confidence: 99%

“…Indium oxides films are polycrystalline with grain sizes varying from 100 to 1,000 Å depending on the method of preparation and the subsequent engineering processes (Lee et al 1989). It was noted that the conductivity of In 2 O 3 films is determined by the presence of adsorbed oxygen, which plays the role of electron acceptor and is in equilibrium with the surface defects (Bogdanov et al 1999). It was experimentally shown that radiation induced partial crystallisation of thin In 2 O 3 /SiO film (Arshak and Korostynska 2003).…”

Section: Methodsmentioning

confidence: 99%

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Ozone and gamma radiation sensing properties of In2O3:ZnO:SnO2 thin films

et al. 2007

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Both gamma radiation and ozone sensing properties of mixed oxides in the form of thin films are explored. External effects, such as radiation and ozone, cause defects in the materials it interacts with and, consequently, it causes changes in their properties. These changes manifest themselves as the alterations in both the electrical and the optical parameters, which are being measured and employed for dosimetry sensor development. An Edwards E306A thermal coating system was used for In 2 O 3 :ZnO:SnO 2 (90%:5%:5%) films deposition. For the electrical properties measurements, Cu electrodes were manufactured on the glass substrate via thermal evaporation of Cu; then AZ5214 photoresist was spin-coated over it and exposed to ultraviolet (UV) light via the acetate, containing the desired electrodes patterns. After the exposure, the substrate was placed in Electrolube PDN250ML developer solution and then rinsed in water and placed in the etching solution of SEMO 3207 fine etch crystals to reveal the electrode pattern. The optical properties of In 2 O 3 :ZnO:SnO 2 thin films were explored using CARY 1E UV-visible spectrophotometer. The values of the optical band gap E opt are estimated in the view of the Mott and Davis' theory. Doping of In 2 O 3 with 5% ZnO and 5% SnO 2 dramatically changes the overall structure of the film and thus affects its sensing to gamma radiation and ozone.Mixing metal oxides in certain proportions provides a tool for controlling the sensors response.

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“…Accordingly, it is necessary to develop sensors with sufficient sensitivity and quick response time to detect NO 2 at low concentrations, such as a few ppm, in the ambient [21]. Previous reports demonstrated that In 2 O 3 thin-film sensors are sensitive to low concentrations of NO 2 gas in air [14,[22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%