2006
DOI: 10.1016/j.snb.2005.03.104
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Effect of Ni doping on thick film SnO2 gas sensor

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Cited by 180 publications
(78 citation statements)
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“…NiO is a p-type semiconductor. According to Jain et al [35], this material can be segregated over the n-type SnO 2 , forming n-p junctions. It has been reported that with sensing materials composed of two successive bodies A and B whose conductivity types are different such as p-and n-type, under certain conditions, high response and good selectivity can be observed [36].…”
Section: Resultsmentioning
confidence: 99%
“…NiO is a p-type semiconductor. According to Jain et al [35], this material can be segregated over the n-type SnO 2 , forming n-p junctions. It has been reported that with sensing materials composed of two successive bodies A and B whose conductivity types are different such as p-and n-type, under certain conditions, high response and good selectivity can be observed [36].…”
Section: Resultsmentioning
confidence: 99%
“…Tan et al reported the gas sensing properties of nanostructured SnO 2 [14]; Jain et al reported the effect of Ni doping on SnO 2 gas sensors [15]. However, there are only very few number of papers that focus on the electrical properties of SnO 2 .…”
Section: Introductionmentioning
confidence: 99%
“…For instance, Ce, Ni, Al, Ru, Pd, and Zn elements have already been shown by experiments to be very attractive dopings for SnO 2 gas sensor [20][21][22][23][24][25][26], they can be used to improve the sensitivity, stability, selectivity and response speed of SnO 2 sensor to specific gases. Theoretically, it has been shown that the Ru-doping can promote surface chemical activity so that the characteristics of molecular oxygen adsorption can change from being endothermic on the stoichiometric SnO 2 (110) surface to being exothermic after the doping [27].…”
Section: Introductionmentioning
confidence: 99%