Articles you may be interested inAtomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates J. Vac. Sci. Technol. A 33, 01A130 (2015); 10.1116/1.4901459Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy Hot-wire-assisted atomic layer deposition (HW-ALD) has been identified as a successful method to form high quality metallic films using metallocene and NH 3 . A cobalt film formed by HW-ALD using cobaltocene and NH 3 was successfully demonstrated. The authors have elucidated the mechanism of HW-ALD during the precursor feed period and the reducing period. In the case of cobalt, a deposition temperature above 300 C is needed to avoid an inclusion of carbon impurities. This is because the physisorbed species are involved during the precursor feed period. NH 2 radical promotes the dissociation of the carbon-metal bond during the reducing period. This is examined by elucidation of the gas-phase kinetics, estimation of the surface reactions by quantum chemical calculations, and analysis of the exhaust gas using a quadrupole mass spectrometer.