Effect of Nb doping on preferential orientation, phase transformation behavior and electrical properties of PbZrO3 thin films

Enhancement of charge and energy storage in PbZrO3 thin films by local field engineering

“…with a clear interface between the thin films and Pt bottom electrode. The dense fine-grained structure, which is different from surface morphologies reported for PZO thin films, 19 can be attributed to the rapid thermal annealing process. It was also observed that there were a few small dark regions in the thin films.…”

Tunable polarization-drived superior energy storage performance in PbZrO 3 thin films

“…The γ value for the pure PZO film is 1.02, indicating a first-order phase transition characteristic from AFE to PE. 22,[38][39][40] In comparison, the γ value increases from 1.02 to 1.78 as Li + -Al 3+ ions content increasing, demonstrating Li + -Al 3+ ions enhances the diffuseness degree in response to the local lattice stress. The two-parameter Weibull distribution function was used to characterize EBDS of the resultant thin films.…”

“…In recent years, many studies on improving the energy storage of PZO-based AFE thin films are carried out, such as doping with Ca 2+ , Ba 2+ , Sr 2+ , La 3+ , Eu 3+ , Li + -La 3+ at Pb 2+ site, Ti 4+ , Sn 4+ , Nb 5+ at Zr 4+ site, etc. 13,[15][16][17][18][19][20][21][22] The previous studies indicate that the crystal lattice strain induced by doping ions has a profound influence on the phase structure Journal of Advanced Ceramics https://mc03.manuscriptcentral.com/jacer 4 and electric field-induced phase transformation, however, the Wrec and η values are still not sufficiently improved. Especially, the excessive energy loss not only reduces the discharge energy storage density, but also accelerates the insulation degradation and decreases the operation reliability of dielectric capacitors.…”

Temperature-dependent reversible and irreversible processes in Nb-doped PbZrO3 relaxor ferroelectric thin films

“…Temperature driven PNR dynamic displacement and domain wall motion dependence of the dielectric responses were investigated in detail for Nb-doped PbZrO 3 (PNZ) thin film, which shows typical RFE behavior in our previous study. 22 7 mol. % Nb-doped PbZrO 3 (PNZ-7) thin films were deposited on Pt(111)/Ti/SiO 2 /Si(100) substrates by a modified sol-gel method.…”

“…Details about stock solution preparation, film coating, and heat treatment processes were reported earlier. 22 Briefly, lead acetate trihydrate was dissolved in 2-methoxyethanol and distilled for 30 min to remove water. A 20% excess of lead was added to the sol to compensate for lead loss during annealing.…”