Effect of nano‐column properties on self‐separation of thick GaN layers grown by HVPE

Abstract

The implementation of control over self‐separation of thick GaN flayers grown by Hydride Vapor‐Phase Epitaxy (HVPE) on Metal‐Organic Chemical Vapor Deposition (MOCVD)‐grown templates with patterned nano‐column interlayer is reported. Both numerical simulation and experimental data show that separation of thick HVPE layers is provided by non‐uniform redistribution of the growth stress. It is shown that the geometrical parameters of the nano‐column structure such as fill factor and shape of the columns are most critical for self‐separation effect. By adjusting the nano‐column pattern, successful self‐separation of thick HVPE layers from 2‐inch structured MOCVD GaN/sapphire substrate was demonstrated. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

“…2,3 A trend with PSS technology is to shrink the pattern size to get more light extraction [4][5][6][7] and to resolve the wafer bowing problems in GaN growth on large size sapphire substrates (more than 4 inch) 8,9 and in thick film growth, such as 300 μm or more on a heterogeneous substrate. 10 Nano PSS (NPSS) have been paid much attention for the fabrication of high efficiency LEDs in recent years. Almost all of the reports agree with that the LEE for NPSS is superior to that for conventional PSS.…”