Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

Izyumskaya, N.; Liu, S. J.; Avrutin, Vitaliy; Okur, Serdal; Zhang, F.; Özgür, Ü.; Metzner, Sebastian; Karbaum, C.; Bertram, F.; Christen, J.; Smith, David J.; Morkoç̌, H.

doi:10.1117/12.909235

Cited by 5 publications

(4 citation statements)

References 22 publications

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“…We investigated excitonic recombination dynamics in semi-polar (10)(11)-oriented thin GaN/Al 0.2 Ga 0.8 N MQW, which were grown on patterned 7 -off silicon (001) substrates. The structures exhibit robust temperature dependent photoluminescence, low non-radiative recombination rates, and a thermally stable population of free and localized excitons, which is a promising approach for the production of low-cost UV operating devices.…”

Section: Discussionmentioning

confidence: 99%

“…The grooves were etched in KOH solution using a SiN x mask as described elsewhere. 10,11 The patterning of Si (001) substrates makes possible to grow GaN layers with (10)(11) parallel to the surface. Structural and optical properties of (10-11)oriented GaN on patterned Si substrates were investigated in 0021-8979/2014/116(9)/093517/8/$30.00…”

Section: Growth Protocol and Samplesmentioning

confidence: 99%

“…Recombination dynamics of excitons with low non-radiative component in semi-polar (10)(11)-oriented GaN/AlGaN multiple quantum wells I. INTRODUCTION The quest for compact solid state ultraviolet emitters has constituted a new research area in semiconductor physics.…”

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confidence: 99%

“…In this work, we examine the temperature dependence and the recombination dynamics of the photoluminescence (PL) in (10)(11)-oriented semi-polar GaN/Al 0.2 Ga 0.8 N multiple quantum wells (MQW) grown on patterned 7 -off silicon (001) substrates. The paper is organized as follows: after describing the sample growth, we investigate the photoluminescence properties at various temperatures in terms of its anisotropy versus polarization of the emitted photons in the growth plane and give the basic ingredients of solid state physics that permit to grasp the origins of such selection rules.…”

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confidence: 99%

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Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Rosales

Gil

Bretagnon

et al. 2014

Journal of Applied Physics

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Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 1012 cm−2 and a radiative recombination time of τloc = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.

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Section: Discussionmentioning

confidence: 99%

Section: Growth Protocol and Samplesmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Rosales

Gil

Bretagnon

et al. 2014

Journal of Applied Physics

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Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Izyumskaya

Zhang

Okur

et al. 2013

Journal of Applied Physics

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Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence

Okur

Metzner

Izyumskaya

et al. 2013

Applied Physics Letters

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Spatial distribution of extended defects in semipolar (11¯01)-oriented GaN layers grown on patterned (001) Si substrates with striped grooves of varying width was investigated by optical means only using near-field scanning optical microscopy (NSOM) and cathodoluminescence (CL). A high density of basal and prismatic stacking faults was observed in the c− wings, and the threading dislocations in c+ wings, which appear as dark patterns in the NSOM and CL images, were found to bend toward the surface during the initial stages of growth. In the case when growing c+ front of GaN made contact with the SiO2 masking layer during growth, stacking faults were found to form also in the c+ wings. These additional stacking faults effectively blocked propagation of dislocations along the c+ direction, resulting in high quality stripes virtually free of defects. As revealed by optical means only without the need for any structural investigation, such control over the threading dislocation density using select growth geometries is potentially advantageous for improving semipolar (11¯01)GaN.

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Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

Cited by 5 publications

References 22 publications

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence

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