Effect of Mn Doping on the Optical and Electrical Properties of Double Perovskite Sr2TiCoO6

Abstract

A new series of Sr2TiCo1−xMnxO6 (0.0 ≤ x ≤ 0.7) materials has been synthesized using the conventional solid-state method. In this research, X-ray diffraction (XRD) results showed that Mn was successfully doped at the Co site in a cubic structure with monoclinic P21/n space group. The effect of Mn cation substitution on the structural, optical and electrical performance of Sr2TiCo1−xMnxO6 double perovskite was investigated. The optical study revealed a nonlinearity pattern of the band gap that is referred to as the band gap bowing trend. Results from optical and Rietveld refinement supports that the band gap bowing trend is correlated with the charge distribution that produces unique effects on structural and size changes due to the Co-Mn compositions. The morphological scanning electron microscopy studies also showed that larger crystallite sizes were developed when dopant was added. Furthermore, increases in the conductivities support the lowering band gap of Mn-doped samples. Here, the intermixing of the atomic orbitals of Co-Mn provides an efficient interlink electrical pathway to improve conductivity and exhibits a high dielectric property at room temperature. These values are strong evidence that STCM material will be suitable for applications in the semiconductor industry.

Re/Ir@Os-doping induced insulator-to-metal transition in Mott-insulator Ca2FeOsO6: octahedral distortion effects

“…A decrease in E g is observed in the Mn-doped Sr 2 TiCo 1− x Mn x O 6 (0.0 ≤ x ≤ 0.7) structure and due to the now reasonable semiconductor optical E g , they become excellent candidates for electronic devices. 21 Furthermore, an enhancement in T C value from 411 K for x = 0 to 432 K for x = 0.20 is noted in the Sr 2 (Fe 1− x Ni x )MoO 6 DPO along with long range B-site ordering. 22 Also, doping at the B′-site can also produce striking phenomena such as the enhancement in T C value found in Os@Re (Os-doping at Re-site) doped Sr 2 CrReO 6 structure and a HM-to-insulator transition occurring at 60% Os because of the partial occupation of t 2g orbitals.…”