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-site randomness on the antiferroelectric/relaxor nature of the ground state: Diffuse and inelastic x-ray scattering study of 
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Ohwada, Kenji; Tsukada, Shinya; Fukuda, Tatsuo; Tsutsui, Satoshi; Baron, Alfred Q. R.; Мizuki, J.; Ohwa, Hidehiro; Yasuda, Naohiko; Terauchi, Hikaru

doi:10.1103/physrevb.98.054106

Cited by 4 publications

(5 citation statements)

References 56 publications

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“…In Pb(In 0.5 Nb 0.5 )O 3 , an order–disorder transformation for the In and Nb ions can be controlled with appropriate thermal annealing and/or quenching. B‐site order with intermediate length scales yields relaxor FE response, whereas the ordered state is AFE 109,110,119–121 . Figure 14A contrasts the dielectric permittivity versus temperature for intermediate and long‐range B‐site ordered Pb(In 0.5 Nb 0.5 )O 3 ; Figure 14B shows the dark‐field imaging of the ½{hh0} superlattice reflections 122 …”

Section: Crystal Structures and Crystallography Of Afesmentioning

confidence: 99%

“…(A) Dielectric permittivity in the double perovskite Pb(In 0.5 Nb 0.5 )O 3 with relaxor and AFE order (reproduced by permission from Ref. [121]). (B) Transmission electron microscopy images of Pb(In 0.5 Nb 0.5 )O 3 with nanopolar ordering in the disordered materials as imaged through a dark‐field image of a ½{110} superlattice, the [011] zone axis pattern shows the ½{hh0} dipole superlattice and the ½{hhh} B‐site chemical ordering superlattice reflections (reproduced by permission from Ref.…”

Section: Crystal Structures and Crystallography Of Afesmentioning

confidence: 99%

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Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

et al. 2021

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Antiferroelectric (AFE) materials are of great interest owing to their scientific richness and their utility in high-energy density capacitors. Here, the history of AFEs is reviewed, and the characteristics of antiferroelectricity and the phase transition of an AFE material are described. AFEs are energetically close to ferroelectric (FE) phases, and thus both the electric field strength and applied stress (pressure) influence the nature of the transition. With the comparable energetics between the AFE and FE phases, there can be a competition and frustration of these phases, and either incommensurate and/or a glassy (relaxor) structures may be observed. The phase transition in AFEs can also be influenced by the crystal/grain size, particularly at nanometric dimensions, and may be tuned through the formation of solid solutions. There have been extensive studies on the perovskite family of AFE materials, but many other crystal structures host AFE behavior, such as CuBiP 2 Se 6 . AFE applications include DC-link capacitors for power electronics, defibrillator capacitors, pulse power devices, and electromechanical actuators. The paper concludes with a perspective on the future needs and opportunities with respect to discovery, science, and applications of AFE. K E Y W O R D S applications, dielectric materials/properties, ferroelectricity/ferroelectric materials, phase transition F I G U R E 3 Antiferroelectric double hysteresis loops in (A) Pb(Lu 0.5 Nb 0.5 )O 3 and (B) the temperature-dependent critical field in it (replotted from Ref. [30]). (C) shows the phase diagram of PbZrO 3 as a function of temperature and electrical field (replotted from Ref.

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Section: Crystal Structures and Crystallography Of Afesmentioning

confidence: 99%

Section: Crystal Structures and Crystallography Of Afesmentioning

confidence: 99%

Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

et al. 2021

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“…The best-known member of the RFE family is the disordered AB O 3 perovskite crystal. In particular, chemical heterogeneities or B -site randomness in RFEs is commonly seen to be intrinsic to the emergence of the relaxor state and have a strong influence on the macroscopic properties . The manipulation of local cation disorder in RFEs is the most acceptable way to access hidden phases, structural phase transitions, and quantum critical point phase spaces for both fundamental studies of emergent properties and a wide range of applications. , …”

Section: Introductionmentioning

confidence: 99%

“…In particular, chemical heterogeneities or Bsite randomness in RFEs is commonly seen to be intrinsic to the emergence of the relaxor state and have a strong influence on the macroscopic properties. 20 The manipulation of local cation disorder in RFEs is the most acceptable way to access hidden phases, structural phase transitions, and quantum critical point phase spaces for both fundamental studies of emergent properties and a wide range of applications. 21,22 To create high-performance RFE perovskite oxides, chemical modificationas an extrinsic substitutional defecthas been extensively used to create compositional disorder and to tailor the relaxor behavior.…”

Section: Introductionmentioning

confidence: 99%

High Entropy Oxide Relaxor Ferroelectrics

Sharma

Lee

Pitike

et al. 2022

ACS Appl. Mater. Interfaces

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Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design new materials in this class generally rely on substitutional doping of known ferroelectrics, as slight changes to local compositional order can significantly affect the Curie temperature, morphotropic phase boundary, and electromechanical responses. In this work, we demonstrate that moving to the strong limit of compositional complexity in an ABO3 perovskite allows stabilization of novel relaxor responses that do not rely on a single narrow phase transition region. Entropy-assisted synthesis approaches are used to create single crystal Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 [Ba(5B)O] films. The high levels of configurational disorder present in this system is found to influence dielectric relaxation, phase transitions, nano-polar domain formation, and Curie temperature. Temperature-dependent dielectric, Raman spectroscopy and second-harmonic generation measurements reveal multiple phase transitions, a high Curie temperature of 570 K, and the relaxor ferroelectric nature of Ba(5B)O films. The first principles theory calculations are used to predict possible combinations of cations to quantify the relative feasibility of formation of highly disordered single-phase 2 perovskite systems. The ability to stabilize single-phase perovskites with such a large number of different cations on the B-sites offers new possibilities for designing high-performance materials for piezoelectric, pyroelectric and tunable dielectric applications.

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“…14) It can be easily inferred that observing the vibrations and relaxations involved in the precursor phenomena could provide more useful information; therefore, many studies using Raman, Brillouin, and dielectric spectroscopies have been carried out to characterize MPBs in the paraelectric phase. 12,[18][19][20][21][22] One of the main features of Raman spectra of relaxors and their solid solutions is the presence of Raman active modes which are forbidden in the paraelectric C phase. 12,23,24) The origin of these modes is still a matter of debate, but it is likely to be due to static and dynamic local structures: chemically ordered regions (CORs) and polar nanoregions (PNRs) are known to exist as local structures in addition to the offcentering of Pb atoms.…”

Section: Introductionmentioning

confidence: 99%

Morphotropic phase boundaries of (1−x)Pb(Zn_1/3Nb_2/3)O₃–xPbTiO₃ probed by Raman spectroscopy at high temperature

Kanagawa¹,

Fujii²,

Ohwada³

et al. 2021

Jpn. J. Appl. Phys.

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Morphotropic phase boundaries (MPBs) in relaxor Pb(Zn 1/3 Nb 2/3 )O 3 -ferroelectric PbTiO 3 systems were investigated by means of angle-resolved polarized Raman spectroscopy at 800 K in the paraelectric phase. The features of the spectra represented by contour maps were extracted through the multivariate curve resolution (MCR) method, rendering the comparison among the data with six compositions more accurate and convenient. The result indicates that the structure becomes unstable at x = 0.07, which is slightly smaller than the MPB occurring at x = 0.09. The additional analysis using the MCR method to investigate the x dependence of the extracted Raman spectra shows anomalies at the MPB. The information related to the MPB near room temperature could be extracted through Raman spectroscopy even in a simple high-temperature paraelectric phase.

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Effect of B -site randomness on the antiferroelectric/relaxor nature of the ground state: Diffuse and inelastic x-ray scattering study of Pb(In1/2Nb1/

Cited by 4 publications

References 56 publications

Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

High Entropy Oxide Relaxor Ferroelectrics

Morphotropic phase boundaries of (1−x)Pb(Zn_1/3Nb_2/3)O₃–xPbTiO₃ probed by Raman spectroscopy at high temperature

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Effect of B -site randomness on the antiferroelectric/relaxor nature of the ground state: Diffuse and inelastic x-ray scattering study of Pb(In1/2Nb1/

Cited by 4 publications

References 56 publications

Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

High Entropy Oxide Relaxor Ferroelectrics

Morphotropic phase boundaries of (1−x)Pb(Zn1/3Nb2/3)O3–xPbTiO3 probed by Raman spectroscopy at high temperature

Contact Info

Product

Resources

About

Morphotropic phase boundaries of (1−x)Pb(Zn_1/3Nb_2/3)O₃–xPbTiO₃ probed by Raman spectroscopy at high temperature