Effect of mechanical strain on lateral photovoltaic effect in n‐3C‐SiC/n‐Si hetorjunction Toward mechanical strain sensors capable of photoenergy harvesting

Tran, D.H.Dang; Nguyen, Tuan-Hung; Nguyen, Cong Thanh; Streed, Erik W.; Nguyen, Nam-Trung; Dau, Van Thanh; Dao, Dzung Viet

doi:10.1016/j.nanoen.2024.109844

Nano Energy

2024

DOI: 10.1016/j.nanoen.2024.109844

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Effect of mechanical strain on lateral photovoltaic effect in n‐3C‐SiC/n‐Si hetorjunction Toward mechanical strain sensors capable of photoenergy harvesting

D.H.Dang Tran,

Tuan-Hung Nguyen,

Cong Thanh Nguyen

et al.

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2024

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Cited by 2 publications

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Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors

Nguyen,

Tran

et al. 2024

ACS Appl. Electron. Mater.

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Understanding the sensing mechanism and the structure–property relationship of self-powered, ultrasensitive photodetectors and temperature sensors is essential for their development. In this study, we report the thermo-phototronic effect observed in double semiconductor heterostructures capable of light harvesting and ultrasensitive temperature sensing. To demonstrate the advances of using the double heterostructure, we conducted a comparative study with a single heterostructure of highly doped n-3C-SiC/p-Si to understand the light harvesting capability and sensing performance. Our results show that the double n-3C-SiC/p-Si heterostructure outperformed the single counterpart in both photovoltage generation and sensitivity, confirming that the structural design significantly impacts the sensing performance of the devices. Under 7.5 mW/cm2 illumination, the measured voltage in the double structure changed by 21 mV under a 0.2 K temperature gradient, corresponding to an ultrahigh sensitivity of 110 mV/K. This sensitivity is more than 300 times higher than that of 0.3 mV/K observed in the single heterostructure. The underlying physics is attributed to the structural design of the double n-3C-SiC/p-Si heterostructure that controls charge carrier diffusion from the illuminated electrode to the other, resulting in a high photovoltage. These findings demonstrate that using the double n-3C-SiC/p-Si heterostructures can significantly enhance the sensitivity compared with using the single heterostructures, thereby contributing significantly to the development of self-powered photodetectors and temperature sensors.

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Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors

Nguyen,

Tran

et al. 2024

ACS Appl. Electron. Mater.

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Using TiO₂ to capture hot electrons for self-powered position-sensitive photodetection

Zheng,

Deng,

Duan

et al. 2024

Opt. Lett.

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As environmental issues arise, the demand for self-powered position-sensitive detectors (PSDs) is increasing because of their advantages in miniaturization and low power consumption. Finding higher efficiency schemes for energy conversion is paramount for realizing high-performance self-powered PSDs. Here, a surface plasmon-based approach was used to improve the energy conversion efficiency, and a plasmon-enhanced lateral photovoltaic effect (LPE) was observed in PSD with TiO2/Au nanorods (NRs)/Si structure. The Au NRs convert absorbed light energy into electricity by generating hot electrons, which are efficiently captured by the TiO2 layer, and the PSD is capable of generating position sensitivity as high as 251.75 mV/mm when illuminated by a 780 nm laser without any external power supply, i.e. about five times higher than similar sensors in previous studies. In addition, the position sensitivity can be tailored by the thickness of TiO2 films. The enhancement mechanism is investigated by a localized surface plasmon (LSP)-driven carrier diffusion model. These findings reveal an important strategy for high sensitivity and low energy cost PSDs while opening up new avenues for energy harvesting self-powered position sensors.

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Effect of mechanical strain on lateral photovoltaic effect in n‐3C‐SiC/n‐Si hetorjunction Toward mechanical strain sensors capable of photoenergy harvesting

Cited by 2 publications

References 38 publications

Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors

Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors

Using TiO₂ to capture hot electrons for self-powered position-sensitive photodetection

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Effect of mechanical strain on lateral photovoltaic effect in n‐3C‐SiC/n‐Si hetorjunction Toward mechanical strain sensors capable of photoenergy harvesting

Cited by 2 publications

References 38 publications

Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors

Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors

Using TiO2 to capture hot electrons for self-powered position-sensitive photodetection

Contact Info

Product

Resources

About

Using TiO₂ to capture hot electrons for self-powered position-sensitive photodetection