Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3

Abazari, M.; Akdoğan, E. K.; Safari, A.

doi:10.1063/1.2937000

Cited by 67 publications

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“…It should be noted that the current density in our KNLNT thin film is remarkably lower than that in the KNN-LT-LS based films. [10][11][12] It is speculated that the low current density is attributed to the strong ͑110͒ orientation, as the c-axis oriented or columnar-grained microstructure may offer more leakage current paths through the vertically aligned grain boundaries. 16 Since no significant asymmetry in J-E behavior upon reversal of the polarity of applied voltage can be observed, we will hereafter study the situation in which Pt electrode is positively biased.…”

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Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3 thin films grown by pulsed laser deposition

Wang

Lin

Kwok

et al. 2011

Applied Physics Letters

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Lead-free ͑K 0.48 Na 0.48 Li 0.04 ͒͑Nb 0.775 Ta 0.225 ͒O 3 ͑KNLNT͒ thin films were deposited on Pt͑111͒ / Ti/ SiO 2 / Si͑001͒ substrates using pulsed laser deposition. The film exhibited a well-defined ferroelectric hysteresis loop with a remnant polarization 2P r of 22.6 C / cm 2 and a coercive field E c of 10.3 kV/mm. The effective piezoelectric coefficient d 33,f of the KNLNT thin films was found to be about 49 pm/V by piezoelectric force microscope. The dominant conduction mechanisms of Au/KNLNT/Pt thin film capacitor were determined to be bulk-limited space-charge-limited-current and Poole-Frenkle emission at low and high electric field strengths, respectively, within a measured temperature range of 130-370 K. © 2011 American Institute of Physics. ͓doi:10.1063/1.3535608͔Because of the increasingly environmental concerns and legislations against the use of lead-based piezoelectric materials in the immediate future, great efforts have been made to develop high performance lead-free piezoelectric materials. 1Among them, ͑K 1−x Na x ͒NbO 3 ͑KNN hereafter͒ is considered to be a promising candidate owing to its pronounced ferroelectric and piezoelectric properties, high Curie temperature, and biocompatible nature. KNN thin films have been grown on various substrates by both physical and chemical approaches.2-8 Pioneer works on thin film KNN materials were mainly focused on undoped compositions in the vicinity of morphotropic phase boundary ͑MPB͒. Good ferroelectricity and high resistivity at low electric field were reported.8 Recent breakthrough in the textured highly piezoelectric Li, Ta, Sb doped KNN ͑KNN-LT-LS͒ ceramics by Saito et al. 9 has triggered intensive studies on KNN-LT-LS based thin films. [10][11][12] In spite of relatively high ferroelectric and piezoelectric properties, the films yet suffered from a high leakage current ͑e.g., Ͼ10−1 A / cm 2 @10 kV/ mm͒ and details of conduction mechanisms remain unclear. Indeed, the participation of toxic Sb in KNN-LT-LS system does not meet the ecological strategy of development of lead-free piezoelectrics.Ours and Hollenstein's studies 13,14 have revealed that Li + and Ta 5+ dual dopants can dramatically enhance the piezoelectric properties of KNN ceramics. The specific composition ͑K 0.48 Na 0.48 Li 0.04 ͒͑Nb 0.775 Ta 0.225 ͒O 3 ͑KNLNT hereafter͒ possesses optimal piezoelectric properties at room temperature due to the coexistence of tetragonal and orthorhombic phases. This MPB-like behavior and less processing and compositional complexity, especially the absence of toxic Sb content, as compared with KNN-LT-LS, have made KNLNT a promising candidate for biocompatible piezoelectric device applications. In this letter, we reported the excellent ferroelectric and piezoelectric properties, and low leakage current density in KNLNT thin films grown by pulsed laser deposition ͑PLD͒. Conduction mechanisms of the KNLNT thin films were investigated in detail.The stoichiometric target of KNLNT used for laser ablation was fabricated by the conventional solid state reaction...

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“…[10][11][12] In spite of relatively high ferroelectric and piezoelectric properties, the films yet suffered from a high leakage current ͑e.g., Ͼ10…”

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confidence: 99%

Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3 thin films grown by pulsed laser deposition

Wang

Lin

Kwok

et al. 2011

Applied Physics Letters

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“…It has been reported that the Mn doping is effective to lower the leakage current in BiFeO 3 and ͑K,Na͒NbO 3 by suppressing of intrinsic p-type conductivity of undoped films. 21,22 This is associated with decreasing the total number of free carriers ͑holes͒ that correlated with the A-site vacan- cies. In our Mn-doped BNBT thin films, similar phenomena could be achieved, as Mn 2+ ͑r ϳ 0.90 Å͒ possesses close ionic radius to Na + ͑r ϳ 1.02 Å͒ and Bi 3+ ͑r ϳ 1.03 Å͒, thus very likely occupies the A-site vacancies.…”

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Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films

Wang

Chan

et al. 2010

Applied Physics Letters

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Doping effects with respect to the electrical properties of morphotropic phase boundary ͑Bi 0.5 Na 0.5 ͒ 0.94 Ba 0.06 TiO 3 thin films epitaxially grown on CaRuO 3 electroded ͑LaAlO 3 ͒ 0.3 ͑Sr 2 AlTaO 6 ͒ 0.35 ͑001͒ substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+ Ce codoped films with a remanent polarization P r of 29.5 C / cm 2 and a remanent piezoelectric coefficient d 33,f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect. © 2010 American Institute of Physics. ͓doi:10.1063/1.3518484͔Due to the increasing environmental and biological concerns on high toxicity of lead present in the widely used Pb͑Zr, Ti͒O 3 ͑PZT͒ family, considerable attention has been drawn to develop lead-free ferroelectric materials in the past two decades. 1 Among various potential lead-free piezoelectric ceramics, A-site complex perovskite ͑Bi 0.5 Na 0.5 ͒TiO 3 ͑BNT͒ is considered to be one of the strong candidates because of its marked ferroelectricity/piezoelectricity. 2,3 The pioneer work by Takenaka et al. 4 demonstrated that rhombohedral ͑F ␣ ͒-tetragonal ͑F ␤ ͒ morphotropic phase boundary ͑MPB͒ in ͑Bi 0.5 Na 0.5 ͒TiO 3 -BaTiO 3 ͑BNBT͒ binary system is remarkably effective in promoting piezoelectric properties. Subsequent studies revealed the piezoelectric performance of BNBT ceramics with MPB composition could be further enhanced by appropriate dopants. [5][6][7] In spite of the numerous studies on BNT-based single crystals and ceramics, literature tackling with the growth and characterization of BNT-based, especially BNBT-based thin films, still remains at an infancy stage. [8][9][10][11][12] Consequently, doping effects on the electrical properties of thin film BNBT materials are still unclear. Abazari et al. 13 has recently reported epitaxial potassium modified BNBT thin films grown on SrRuO 3 coated SrTiO 3 substrates by pulsed laser deposition ͑PLD͒. Dielectric and piezoelectric properties of the films were evaluated macroscopically. However, the nanoscale characterization of piezoresponse of doped BNBT thin films is still missing. In this letter, thin films of La+ Ce codoped and Mn-doped BNBT with composition in the vicinity of MPB are epitaxially deposited on CaRuO 3 ͑CRO͒ electroded ͑LaAlO 3 ͒ 0.3 ͑Sr 2 AlTaO 6 ͒ 0.35 ͑LSAT͒ ͑001͒ singlecrystal substrates by PLD. Effects of dopants on ferroelectric, dielectric, leakage current, and local piezoelectric properties of the BNBT-based thin films are investigated.The 10% Bi-enriched targets of ͑Bi 0.5 Na 0.5 ͒ 0.94 Ba 0.06 TiO 3 + 0.5 mol % CeO 2 + 0.5 mol % La 2 O 3 ͑BNBT-LaCe͒, ͑Bi 0.5 Na 0.5 ͒ 0.94 Ba 0.06 TiO 3 + 0.5 mol % MnO 2 ͑BN-BTMn͒ used for laser ablation were fabricated by the conventional solid state reaction route. The substrates were cubic ͑001͒-oriented LSAT ͑a = 3.868 Å͒, which were first coated a layer of CRO ͑ϳ40 nm͒ by PLD...

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“…2(d). The leakage current of Mn-doped KNN-KNT-LS and KNN-KNT-LS films reported in the literatures are two and five order magnitudes higher than our KNN-KNT-LT film, respectively [7,9]. Hence, the defect contributions to the polarization and dielectric constant should be small.…”

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confidence: 99%

Properties of (K,Na)NbO3-based lead-free piezoelectric films prepared by pulsed laser deposition

Chua

You

et al. 2010

Thin Solid Films

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Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3

Cited by 67 publications

References 20 publications

Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3 thin films grown by pulsed laser deposition

Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3 thin films grown by pulsed laser deposition

Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films

Properties of (K,Na)NbO3-based lead-free piezoelectric films prepared by pulsed laser deposition

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