Effect of manganese concentration on physical and electrochemical properties of Mn2+-doped ZnS thin films deposited onto ITO-(glass) substrates by electrodeposition technique

Arbi, N.; Assaker, I. Ben; Gannouni, M.; Kriaa, A.; Chtourou, R.

doi:10.1007/s10854-016-6155-0

Cited by 6 publications

(2 citation statements)

References 38 publications

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“…The incorporation of elements such as iron (Fe), manganese (Mn), nickel (Ni), cobalt (Co) that have self-induced spin electronic properties into chalcogenides semiconductor thin film materials such as CuS have been known to demonstrate high performance potentials for many device applications. The high performnce potentials is because sizeable numbers of the ions of such elements (Mn 2+ , Fe 2+ , Co 2+ etc) give rise to varieties of cooperative effects through process of spin-spin exchange interactions, [11,12]. To that effect, [13] used electrodeposition technique to grow CuMnS composites on a Ni-substrate and reported that electrochemical properties of CuMnS electrodes displayed maximum specific capacitances of 2290 F/g at 10 A/g current density and uniform capacitance retention rate (~94 %) after 2500 charging-discharging cycles.…”

Section: Introductionmentioning

confidence: 99%

Study of the Optical, Structural and Morphological Properties of Electrodeposited Copper Manganese Sulfide (CuMnS) Thin Films for Possible Device Applications

Nwori

Ezenwaka²,

Ottih³

et al. 2022

Trends Sci

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Semiconductor thin films of CuMnS have been deposited onto conductive fluorine-doped tin oxide (FTO) glass substrate using an electrodeposition method to investigate their properties for possible applications. Copper sulfate, manganese sulfate and Thiourea were precursors used for sources of copper, manganese and sulphur ions respectively. The concentration of manganese ions was varied while keeping deposition voltage and time constant at 0.6 and 100 s, respectively. The films were characterized for optical, structural and morphological properties. The results obtained showed that the absorbance of the films is high in the visible (VIS) and near-infrared (NIR) regions but decreases towards NIR. The films transmittance is low in the VIS but increased in the NIR regions. The extinction coefficient is low in the VIS and NIR regions and decreases as concentration of manganese ion increased. The refractive index is high and initially increased slightly from 4.49 to 4.68 in the mid-VIS region while manganese concentration increased from 0.05 to 0.15 M and then decreased to the value of 2.73 as concentration of manganese ion increased further. The optical conductivity is high throughout the VIS and NIR regions while the optical bandgap energy is in the range of 1.5 to 2.05 eV and increases as manganese ion concentration increased. The XRD analysis showed that the deposited thin films of CuMnS are crystalline with average crystallite size and micro-strain in the range of 15.86 - 24. 45 nm and 3.97×10–3 - 6.13×10–3, respectively. The SEM results showed that the films are composed of particle sizes that are spherical in shape, uniform in sizes and densely packed together and consequently make the film surface rough. These properties exhibited by the films make them good materials for applications in photovoltaic calls, solar control coatings, photothermal applications and many other electronic devices that require high temperatures. HIGHLIGHTS This paper focused on the study of the effect of manganese ion concentration on the chalcogenide semiconductor thin films of CuMnS for possible device applications Electrodeposition method was used to fabricate the semiconductor thin films of CuMnS Optical, Structural and morphological properties of the thin films were characterized The deposited thin films of CuMnS were found to have good applications for photovoltaic cells and other optoelectronic device fabrications GRAPHICAL ABSTRACT

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Section: Introductionmentioning

confidence: 99%

Study of the Optical, Structural and Morphological Properties of Electrodeposited Copper Manganese Sulfide (CuMnS) Thin Films for Possible Device Applications

Nwori

Ezenwaka²,

Ottih³

et al. 2022

Trends Sci

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show abstract

“…The elements such as iron (Fe), manganese (Mn), nickel (Ni), cobalt (Co) have been known to possess self-induced spin electronic properties and as such can trigger highperformance potentials in the semiconductor materials they are incorporated for many device applications. The highperformance potentials are attributed to sizeable numbers of the ions of such elements (Mn 2+ , Fe 2+ , Co 2+ , etc) that give rise to varieties of cooperative effects through the process of spin-spin exchange interactions [11][12]. For instance, the influence of Mn doping has been reported to cause broadening of the electronic bandgap energy in the PbS quantum dots (QDs) with the sp-d hybridization between the PbS host material and Mn dopants being attributed to being the responsible factor for the bandgap broadening [13].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Optical, Structural and Compositional Properties of Electrodeposited Lead Manganese Sulfide (PbMnS) Thin Films for Possible Device Applications

et al. 2021

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The properties of PbMnS semiconductor thin films deposited on fluorine-doped tin oxide (FTO) substrate using an electrodeposition method are investigated to determine their possible device applications. Lead acetate, manganese sulfate, and thiourea were used as precursors for sources of lead, manganese, and sulfur ions respectively. The concentration of lead, manganese, and sulfur ions sources with deposition voltage of 1.8 V was kept constant. The films were deposited using three electrodes system of electrodeposition method by varying deposition time. The films were characterized for optical, structural, morphological, and compositional properties and results showed that the absorbance, refractive index, and optical conductivity of the films are high in the visible (VIS) and near-infrared (NIR) regions but decreases in the NIR. These three properties initially increased with an increase in deposition time up to a time of 70 s which has the highest values of these properties before decreasing to lower values. The transmittance and extinction coefficient of the films are low in both VIS and NIR regions. The bandgap energy of PbS was found to be blue shifted with values of 1.51 eV, 1.54 eV, 1.60 eV, 1.45 eV, and 1.35 eV for the films deposited at 30 s, 50 s, 70 s, 90 s, and 110 s respectively. XRD analysis showed that the films are crystalline with sharp peaks positions indexable to crystalline planes of (111), (200), (211), (220), (311) and (400) with average crystallite size in the range of 16.110 nm to 17.218 nm. Energy-dispersive X-ray spectroscopy (EDX) results showed that the films are composed of lead, manganese, and sulfur but there are some impurity elements present mostly as a result of the substrate used. These properties exhibited by the deposited thin films of PbMnS showed that they can be used for many optoelectronic applications such as photovoltaic cells, sensors, photoconductors, etc.

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Single-step electrochemical deposition of Mn2+ doped FeS2 thin films on ITO conducting glass substrates: physical, electrochemical and electrocatalytic properties

Prabukanthan¹,

Thamaraiselvi²,

Harichandran

et al. 2019

J Mater Sci: Mater Electron

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Effect of manganese concentration on physical and electrochemical properties of Mn2+-doped ZnS thin films deposited onto ITO-(glass) substrates by electrodeposition technique

Cited by 6 publications

References 38 publications

Study of the Optical, Structural and Morphological Properties of Electrodeposited Copper Manganese Sulfide (CuMnS) Thin Films for Possible Device Applications

Study of the Optical, Structural and Morphological Properties of Electrodeposited Copper Manganese Sulfide (CuMnS) Thin Films for Possible Device Applications

Investigation of the Optical, Structural and Compositional Properties of Electrodeposited Lead Manganese Sulfide (PbMnS) Thin Films for Possible Device Applications

Single-step electrochemical deposition of Mn2+ doped FeS2 thin films on ITO conducting glass substrates: physical, electrochemical and electrocatalytic properties

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