2018
DOI: 10.1016/j.jmmm.2018.03.031
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Effect of magnetic and electric fields on electrical and magnetic properties of multiferroic BiMnO 3 films

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Cited by 7 publications
(3 citation statements)
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“…Magnetostriction refers to the alteration in length or volume of ferromagnetic materials when they are magnetized in an external magnetic field [1][2][3][4][5]. Materials with excellent magnetostrictive properties hold significant potential for various applications including sensors, brakes, micro-electro-mechanical systems, energy harvesting, and underwater sonar scanning [6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…Magnetostriction refers to the alteration in length or volume of ferromagnetic materials when they are magnetized in an external magnetic field [1][2][3][4][5]. Materials with excellent magnetostrictive properties hold significant potential for various applications including sensors, brakes, micro-electro-mechanical systems, energy harvesting, and underwater sonar scanning [6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…When a ferromagnetic material is exposed to a magnetic field, its dimensions change, and this effect is called magnetostriction [ 1 , 2 , 3 , 4 ]. Due to the excellent characteristics of large magnetoelastic coupling coefficient, large output stress, fast mechanical response and strong stability, magnetostrictive materials have important application value and broad application prospects in the fields of robot, automobile brake, sensor, transducer, displacement device, high-energy micro power device, acoustics, magnetism and so on [ 5 , 6 , 7 , 8 ].…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, multiferroic materialspossessing more than one of the ferroelectricity, magnetic ordering, and ferroelasticity simultaneouslyhave been found in heterostructures and composites, especially in that with perovskite structures, like YMnO 3 , BiFeO 3 , , BiMnO 3 , and EuTiO 3 . These compounds bearing rich functionality present promising applications in sensors and high-performance storage devices.…”
Section: Introductionmentioning
confidence: 99%