Effect of Machining-Induced Subsurface Defects on Dislocation Evolution and Mechanical Properties of Materials via Nano-indentation

Abstract

Subsurface defects have a significant impact on the precision and performance of nano-structures. In this paper, molecular dynamics simulation of nano-indentation is performed to investigate the effect of machining-induced subsurface defects on dislocation evolution and mechanical properties of materials, in which the specimen model with subsurface defects is constructed by nano-cutting conforming to reality. The formation mechanism of subsurface defects and the interaction mechanism between machine-induced defects and dislocation evolution are discussed. The hardness and Young’s elastic modulus of single crystal copper specimens are calculated. The simulation results indicate that there exist stable defect structure residues in the subsurface of workpiece, such as atomic clusters, stacking fault tetrahedral, and stair-rod dislocations. Secondary processing of nano-indentation can restore internal defects of the workpiece, but the subsurface damage in the secondary processing area is aggravated. The nano-indentation hardness of specimens increases with the introduction of subsurface defects, which results in the formation of work-hardening effect. The existence of subsurface defects can weaken the ability of material to resist elastic deformation, in which the mutual evolution between dislocations and subsurface defects plays an important role.

Depth localization of subsurface defects by optical dark-field confocal microscopy

“…Meanwhile, the accurate depth localization of SSD is crucial for minimising processing redundancy and optimising processing quality and production efficiency. This is particularly important for the in-situ repair and modification of SSD [16]. However, when using the three-dimensional optical microscopy to locate SSD, a challenge arises because of the refractive index mismatch between the sample and observation environment medium of the objective lens.…”