2018
DOI: 10.1016/j.jcrysgro.2018.05.019
|View full text |Cite
|
Sign up to set email alerts
|

Effect of MACE parameters on length of porous silicon nanowires (PSiNWs)

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
17
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
5
1

Relationship

1
5

Authors

Journals

citations
Cited by 34 publications
(18 citation statements)
references
References 23 publications
1
17
0
Order By: Relevance
“…The precise reactions are still under some discussion in the literature, but the etch rate of silicon under the metal catalyst significantly exceeds that of nonmetal‐coated regions, yielding anisotropic etching. By tailoring the etchant composition and silicon doping, the etch behavior can be varied extensively, allowing the direct formation of porous silicon nanostructures and inclined silicon nanowires …”
Section: Fabrication Techniquesmentioning
confidence: 99%
“…The precise reactions are still under some discussion in the literature, but the etch rate of silicon under the metal catalyst significantly exceeds that of nonmetal‐coated regions, yielding anisotropic etching. By tailoring the etchant composition and silicon doping, the etch behavior can be varied extensively, allowing the direct formation of porous silicon nanostructures and inclined silicon nanowires …”
Section: Fabrication Techniquesmentioning
confidence: 99%
“…The Si planes having orientation (400) (most prominent peak at 69.1°) is due to the starting Si (100) substrate, and the Si (111) plane (at 32.9°) arises because of the etching direction of Ag particles. As the doping level of starting Si/PSi substrates is high, only one Si plane, i.e., (111), is formed on the NWs surface apart from (400) plane 20 .…”
Section: Resultsmentioning
confidence: 99%
“…In Route—I (step—I step—II), the Si wafer ( p -type, boron-doped, < 100 > , 275 ± 25 μm thick) was cut into square shapes (1 cm × 1 cm) and cleaned by DI water, as shown in Fig. 1 20 – 22 , 39 , 41 . Two types of resistivity of the Si wafer, i.e., 0.01–0.02 Ω.cm and 0.001–0.005 Ω.cm, were considered to analyze the change in the NWs morphology.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 72 ] Silicon nanowires and porous silicon show hydrogen sensing capabilities. [ 73–75 ] Since reusability improves affordability, Kubas interaction materials are also advantageous for hydrogen sensing. [ 76,77 ]…”
Section: Introductionmentioning
confidence: 99%