Abstract:We present a computational study of the void-induced microstructure in amorphous silicon (a-Si) by generating ultra-large models of a-Si with a void-volume fraction of 0.3%, as observed in small-angle x-ray scattering (SAXS) experiments. The relationship between the morphology of voids and the intensity of scattering in SAXS has been studied by computing the latter from the Fourier transform of the reduced pair-correlation function and the atomic-form factor of amorphous silicon. The effect of low-temperature … Show more
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