Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives

Sarkar, Surajit; Banik, Hritinava; Rahman, Farhana Yasmin; Majumdar, Swapan; Bhattacharjee, Debajyoti; Hussain, Syed Arshad

doi:10.1039/d3ra03869f

Cited by 4 publications

(10 citation statements)

References 98 publications

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“… , However, for real practical applications, data retention time needs to be increased further. It has been observed that by modifying the device fabrication like insertion of nanomaterials and other external agents, it is possible to enhance the data retention time. , An in-depth study is going on in our laboratory in this direction.…”

Section: Resultsmentioning

confidence: 99%

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Banik,

Sarkar,

Bhattacharjee

et al. 2023

ACS Omega

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Biocompatibility and transient nature of electronic devices have been the matter of attention in recent times due to their immense potential for sustainable solutions toward hazardous e-wastes. In order to fulfill the requirement of high-density data-storage devices due to explosive growth in digital data, a resistive switching (RS)-based memory device could be the promising alternative to the present Si-based electronics. In this research work, we employed a biocompatible enzymatic protein lysozyme (Lyso) as the active layer to design a RS memory device having a device structure Au/Lyso/ITO. Interestingly the device showed transient, WORM memory behavior. It has been observed that the WORM memory performance of the device was very good with high memory window (2.78 × 10 2 ), data retention (up to 300 min), device yield (∼73.8%), read cyclability, as well as very high device stability (experimentally >700 days, extrapolated to 3000 days). Bias-induced charge trapping followed by conducting filament formation was the key behind such switching behavior. Transient behavior analysis showed that electronic as well as optical behaviors completely disappeared after 10 s dissolution of the device in luke warm water. Cytotoxicity of the as-prepared device was tested by challenging two environmentally derived bacteria, S. aureus and P. aeruginosa, and was found to have no biocidal effects. Hence, the device would cause no harm to the microbial flora when it is discarded. As a whole, this work suggests that Lyso-based WORM memory device could play a key role for the design of transient WORM memory device for sustainable electronic applications.

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Section: Resultsmentioning

confidence: 99%

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Banik,

Sarkar,

Bhattacharjee

et al. 2023

ACS Omega

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“…has been found to increase the memory performance. 3,20,21 In general, resistive switching memory devices utilize two or more stable resistance states of the active layer to store binary or multibit data. 21 For a device with two stable resistance states, one of them can be regarded as binary '0' and the other as binary '1'.…”

Section: ■ Introductionmentioning

confidence: 99%

“…21 For a device with two stable resistance states, one of them can be regarded as binary '0' and the other as binary '1'. 3 The states can be interchanged upon application of suitable bias voltage corresponding to the SET and RESET operations. 12 In some cases, the OFF state of the device cannot be retrieved once it is SET to the ON state even after the application of an external electric field.…”

Section: ■ Introductionmentioning

confidence: 99%

“…In general, resistive switching memory devices utilize two or more stable resistance states of the active layer to store binary or multibit data . For a device with two stable resistance states, one of them can be regarded as binary '0' and the other as binary '1' . The states can be interchanged upon application of suitable bias voltage corresponding to the SET and RESET operations .…”

Section: Introductionmentioning

confidence: 99%

“…62 However, it can be inferred that the conduction channels may be the consequence of inter and intramolecular charge transfer and charge trapping in the functional organic material. 3,63 On the other hand, from Figure 8, it is apparent that for the device in the presence of ZnO (D 2 ), the average values of R LRS increase linearly with temperature following the linear equation R T = R 0 {1+ α (T − T 0 )}, where R T and R 0 are the resistances at temperature T °C and T 0 °C, respectively, and α is the temperature coefficient of resistivity which depends on the nature of the conducting path. From the linear fitting results (Figure 8), the value of α has been determined to be 5.73 × 10 −4 K −1 which is very close to that of oxygen-vacancy-based conducting filaments.…”

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ZnO Nanoparticle-Induced Performance Enhancement of a Coumarin-Based Nonvolatile Memory Device

Deb,

Rahman,

Sarkar

et al. 2024

ACS Appl. Eng. Mater.

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Resistive switching memory devices based on organic as well as organic–inorganic hybrid materials are emerging as viable candidates for post-Moore nonvolatile memory applications. In this article, we report a nonvolatile write-once-read-many (WORM) resistive switching memory device (Al/7HNO3C/ITO) based on a coumarin derivative 7-hydroxy-N-octadecyl coumarin-3-carboxamide (7HNO3C). The device yield, retention time, read endurance, and memory window of the designed memory device were found to be 36.11%, 4 × 103 s, 1270 cycles, and ∼102, respectively. ZnO nanoparticles were synthesized and incorporated into the active layer of the coumarin-based device in order to enhance the memory performance of the device. The ZnO-incorporated device showed overall improvement in terms of device yield (83.33%), retention time (experimentally 3 × 104 s, extrapolated 10 years), read endurance (9930 cycles), and memory window (∼103) along with a significant decrease in the device-to-device variability. Moreover, density functional theory (DFT) studies and temperature-dependent measurements have revealed that charge transfer and oxygen vacancy filament formation were the key mechanisms behind such an observed memory behavior.

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Demonstration of high-performance STO-based WORM devices controlled by oxygen-vacancies and metal filament growth

Hsu,

Wen,

Xiao

et al. 2024

J. Mater. Chem. C

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Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives

Abstract: Dynamic transition of resistive memory behaviour from volatile threshold switching to non-volatile WORM memory.

Cited by 4 publications

References 98 publications

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

ZnO Nanoparticle-Induced Performance Enhancement of a Coumarin-Based Nonvolatile Memory Device

Demonstration of high-performance STO-based WORM devices controlled by oxygen-vacancies and metal filament growth

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