Effect of loading on long term performance of single junction amorphous silicon modules

Astawa, Ketut; Betts, Thomas R.; Gottschalg, Ralph

doi:10.1016/j.solmat.2010.04.071

Cited by 11 publications

(4 citation statements)

References 5 publications

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“…very pessimistic degradation values in amorphous silicon devices [1]. This can be realized by using an appropriately sized resistance to shunt the devices between measurements.…”

Section: Measurement Accuracymentioning

confidence: 99%

Performance characterisation of photovoltaic modules

Gottschalg

2010

2010 35th IEEE Photovoltaic Specialists Conference

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“…very pessimistic degradation values in amorphous silicon devices [1]. This can be realized by using an appropriately sized resistance to shunt the devices between measurements.…”

Section: Measurement Accuracymentioning

confidence: 99%

Performance characterisation of photovoltaic modules

Gottschalg

2010

2010 35th IEEE Photovoltaic Specialists Conference

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“…[27][28][29] Other studies report longer periods (one year or more) for a complete stabilization. 10,30,31 Hence, the rates obtained for the first and second analyses, which refer to the first days and to the first year, are affected to some extent by stabilization issues, being only the results of the third analysis representative of the long-term degradation. This paper relies on a previous study of degradation of PV modules from the same authors, 32 and it is based on the same measurement system.…”

Section: Introductionmentioning

confidence: 99%

“…The stabilization period for a‐Si is typically considered to be of about 6 weeks 27–29 . Other studies report longer periods (one year or more) for a complete stabilization 10,30,31 . Hence, the rates obtained for the first and second analyses, which refer to the first days and to the first year, are affected to some extent by stabilization issues, being only the results of the third analysis representative of the long‐term degradation.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

Piliougine

Sánchez-Friera

Petrone

et al. 2022

Progress in Photovoltaics

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The degradation of two amorphous silicon‐based photovoltaic (PV) modules, namely, of single junction amorphous silicon (a‐Si) and of micromorph tandem (a‐Si/ μ‐Si), after 11 years of exposure in the south of Spain is analyzed. Their I‐V curves were measured outdoors to study the changes of the electrical parameters in the course of three different periods: during the initial days of exposure, during the first year, and in the subsequent 10‐year period. The translation of the curves to an identical set of operating conditions, which enables a meaningful comparison, was done by the different correction procedures described in the standard IEC60891:2021, including the procedure 3, which does not require the knowledge of module parameters, whose values are typically not available. The annual power degradation rates over the entire 11‐year period are 1.12% for the a‐Si module, which is 3.02% for the first year, and 0.98% for the a‐Si/ normalμ‐Si, which is 2.29% for the initial year.

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“…The variation in degradation can be attributed to many factors such as module manufacturer, manufacturing year, operating time, operating condition and potentially operating history. [3][4][5][6][7][8][9][10][11] These factors are correlated and their effects cannot easily be separated. There are, however, strong indications that the specific operating environment plays a significant role in the absolute amount of ageing experienced by different technologies.…”

Section: Introductionmentioning

confidence: 99%

Towards modelling realistic ageing rates of amorphous silicon devices in operational environment

Zhu¹,

Bliss²,

Betts³

et al. 2015

Jpn. J. Appl. Phys.

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This paper presents a method to de-convolute the annealing and degradation processes of amorphous silicon devices. This will allow modelling realistic outdoor operation. Six devices underwent 14000 hours indoor light exposure at different and varying thermal conditions. The devices are exposed to light at variable temperatures between 25ºC and 85ºC under illumination as well as annealed in the dark. The temperature set-points were altered several times during the test to gain insights on how the balance between light induced degradation and thermal annealing is shifted.Measurements show that the degradation level is largely determined by the device's operating temperature and both processes balance themselves out without consideration of device history. This is explained by the proposed modelling approach based on the defect pool model. The key parameters in the proposed modelling approach are the effective activation energies for degradation and annealing.

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Effect of loading on long term performance of single junction amorphous silicon modules

Cited by 11 publications

References 5 publications

Performance characterisation of photovoltaic modules

Performance characterisation of photovoltaic modules

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

Towards modelling realistic ageing rates of amorphous silicon devices in operational environment

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