Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters

High speed switching of WBG devices causes their switching behavior to be highly susceptible to the parasitics in the circuit, including inductive loads. An inductive load consisting of a motor and power cable significantly worsens the switching speed and losses of SiC MOSFETs in a PWM inverter. This paper focuses on the motor plus power cable based inductive load, and aims at mitigating its negative influence during the switching transient. An auxiliary filter is designed and inserted between the converter and inductive load so that the parasitics of the load will not be "seen" from the converter side during the switching transient. Test results with Cree 1200-V/20-A SiC MOSFETs show that the proposed auxiliary inductor enables the switching performance with a practical inductive load (e.g., motor plus cable based inductive load) to exhibit behavior close to that when the optimally-designed double pulse test load inductor is employed.

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“…On the other hand, high speed switching of WBG devices will be affected by parasitics of loads [5,6]. Fig.…”

Section: Introductionmentioning

confidence: 99%

Decoupling of interaction between WBG converter and motor load for switching performance improvement

Zhang

Wang

Tolbert

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…[81,82] discuss the use of snubber circuits for SiC MOSFETs and the effect of external snubber capacitors for soft-switching operation of SiC MOSFETs. dv/dt limiters, sin wave filters or other types of filters such as LCL filters can be used to limit the dv/dt and filter the switching-frequency harmonics as presented in [67,83,84]. This also helps to reduce the impact of high dv/dt and high-switching frequency on the load.…”

Section: Potential Solutions For High Frequency Sic Convertersmentioning

confidence: 99%

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

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101

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Power devices based on wide-bandgap (WBG) material such as silicon-carbide (SiC) can operate at higher switching speeds, higher voltages and higher temperatures compared to those based on silicon (Si) material. This paper highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference (EMI), current overshoot, cross-talk effect and have a negative impact on loads such as motors. This paper presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side-effects. This paper provides an overview of recent SiC device research and development activities based on academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference to accelerate the adoption and deployment of SiC devices and converters.

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“…The result is shown in Figure 9d and it can be found out that soft-switching off is realized. Severe EMI (Electro-Magnetic Interference) generating ringing in the switching transients as shown in Figure 9 is a generally acknowledged problem for SiC devices and can be addressed by carefully optimizing the driving circuit and measurement techniques [23]. However, it does not affect the validation of the soft-switching methods.…”

Section: Experiments With Soft Switchingmentioning

confidence: 99%

Design Method for the Coil-System and the Soft Switching Technology for High-Frequency and High-Efficiency Wireless Power Transfer Systems

Liu

Wang

et al. 2017

Energies

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Abstract:Increasing the resonant frequency of a wireless power transfer (WPT) system effectively improves the power transfer efficiency between the transmit and the receive coils but significantly limits the power transfer capacity with the same coils. Therefore, this paper proposes a coil design method for a series-series (SS) compensated WPT system which can power up the same load with the same DC input voltage & current but with increased resonant frequency. For WPT systems with higher resonant frequencies, a new method of realizing soft-switching by tuning driving frequency is proposed which does not need to change any hardware in the WPT system and can effectively reduce switching losses generated in the inverter. Eighty-five kHz, 200 kHz and 500 kHz WPT systems are built up to validate the proposed methods. Experimental results show that all these three WPT systems can deliver around 3.3 kW power to the same load (15 Ω) with 200 V input voltage and 20 A input current as expected and achieve more than 85% coil-system efficiency and 79% system overall efficiency. With the soft-switching technique, inverter efficiency can be improved from 81.91% to 98.60% in the 500 kHz WPT system.

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Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters

Cited by 30 publications

References 7 publications

Decoupling of interaction between WBG converter and motor load for switching performance improvement

Decoupling of interaction between WBG converter and motor load for switching performance improvement

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Design Method for the Coil-System and the Soft Switching Technology for High-Frequency and High-Efficiency Wireless Power Transfer Systems

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