Effect of lattice misfit on the transition temperature of VO2 thin film

Abstract

Vanadium dioxide thin films were deposited on c-cut sapphire and MgO(111) substrate using pulsed laser deposition method to investigate the effect of lattice misfit between the thin film and the substrate on the transition temperature of VO 2 thin film. All vanadium dioxide thin films showed heteroepitaxial growth with (002) preferred orientation. VO 2 /c-sapphire and VO 2 /MgO(111) had different transition temperatures, regardless of the thickness, orientation, and deposition conditions of the thin film. These results suggest that considering lattice mismatch between thin film and substrate is another promising option for controlling transition temperature of VO 2 thin films.

Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling

“…13 The luminous transmittance can be boosted by magnesium substitution [14][15] and by fluorination. 16 The metal-insulator transition can be influenced by a variety of external parameters, and recent work have considered the effects of strain [17][18][19] and lattice misfit with the substrate, 20,21 electric field or current activation, [22][23][24][25][26][27][28][29][30][31] light irradiation, [32][33][34][35][36][37][38] ion bombardment, 39,40 and gaseous ambience. 41 Considering the wealth of possibilities to modulate the properties of VO 2 -based thin films, it is not surprising that they are discussed for a vast number of applications such as thermochromic "smart" windows for energy efficient buildings, [42][43][44][45][46][47][48][49][50] variable-thermal-emittance surfaces for thermal radiation control, 51 oscillators and switches in (opto)electronics, 25,26,34,52,53 transistors of different types, <...>…”

Opportunities in vanadium-based strongly correlated electron systems

“…Growth at high substrate temperature to overcome the kinetic barrier to oxidation is not an option for two reasons: (1) the rapid interdiffusion of VO 2 into the underlying substrates [50,52,54] and (2) if the entire film is oxidized to V 2 O 5 , it will all evaporate due to the high vapor pressure of V 2 O 5 . [55] Despite the many challenges involved in the growth of VO 2 films, significant advances have been achieved in its deposition using PLD, [42,[56][57][58][59][60][61][62][63] MBE, [52,53,64,65] sputtering, [66][67][68][69][70][71][72][73] electronbeam deposition, [74] ion-beam depostion, [75] metalorganic [48,49] (c) Resistivity versus temperature for various V-O phases, with a MIT at different temperatures. While V 2 O 3 exhibits the largest change in resistivity over eight orders of magnitude, but below room temperature, VO 2 has the largest resistivity ratio above room temperature of about five orders of magnitude.…”

Enhanced Thermochromic Properties of Vanadium Dioxide (VO2)/Glass Heterostructure by Inserting a Zr-Based Thin Film Metallic Glasses (Cu50Zr50) Buffer Layer

“…From Table 1, the single-layer VO 2 thin films have higher T c than the buffered VO 2 thin films. After introducing the buffer layer (40 nm and 80 nm in thickness), the T c values of VO 2 thin films are similar to that of the bulk VO 2 single crystal (68 • C), which is generally due to the release of stress [31]. The ∆R values of the VO 2 /glass thin films are slightly larger than those of the 40-and 80-nm-thick VO 2 /Cu 50 Zr 50 /glass thin films.…”