Effect of lattice disorder on the thermal conductivity of ZnBeSe, ZnMgSe and ZnBeMgSe crystals

Strzałkowski, K.

doi:10.1016/j.matchemphys.2015.07.065

Cited by 13 publications

(21 citation statements)

References 37 publications

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“…These semiconductors are very promising materials from the point of view of application in construction of visible radiation sources in green laser diodes, spintronics, photodetectors and other applications in modern optoelectronics [19,20]. It is very important from the application point of view that ternary and quaternary II-VI compounds allow an almost smooth change of the bandgap and lattice constant values [21] (bandgap and lattice constant engineering).…”

Section: Since It Is Very Sensitive and Is Complementary Tomentioning

confidence: 99%

Comparison of Theoretical Basics of Microphone and Piezoelectric Photothermal Spectroscopy of Semiconductors

et al. 2016

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Photothermal spectroscopy has found a wide range of applications as a method of monitoring thermal, optical and recombination parameters of semiconductors. We consider microphone detection, widely used in photoacoustic spectroscopy, and piezoelectric detection. Both methods require knowledge of the temperature distribution in the sample and in its surroundings, the support surface and gas. For the microphone signal, we simulated the temperature at one of the sample surfaces; for the piezoelectric signal, we simulated the spatial temperature distribution orthogonal to the sample surface. We modeled an idealized semiconducting sample and one with surface defects. We found that the amplitude and phase spectra vary between the methods, enabling determination of optical and thermal parameters.

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Section: Since It Is Very Sensitive and Is Complementary Tomentioning

confidence: 99%

Comparison of Theoretical Basics of Microphone and Piezoelectric Photothermal Spectroscopy of Semiconductors

et al. 2016

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“…PPE standard experimental setup described previously [11,17] for front and back measurement detection configuration was applied. In brief, it consisted of electronically modulated 300 mW power blue diode laser (=405 nm), a 0.4 mm thick LiTaO 3 detector ( p =1.36 ×10 -6 m 2 •s -1 and e p = 3660 W•s 1/2 •m -2 •K -1 [18]), provided with CrAu electrodes and a SR850 dual-phase lock-in amplifier.…”

Section: Experimental Systemsmentioning

confidence: 99%

“…The modulation frequency of the excitation source was changed in the range 1 to15 Hz and 5 to 45 Hz in case of back and front mode, respectively. For both BPPE and FPPE configuration normalization procedure with empty sensor was applied [11]. Transmission spectra were measured using standard UV-VIS spectrophotometer (Lambda2, PerkinElmer).…”

Section: Experimental Systemsmentioning

confidence: 99%

“…Since efficiency and sensitivity of the potential detector strongly depends on the quality of used crystal it is of high importance to define its lattice disorder. It was shown how lattice disorder effects in case of Zn 1-x Be x Se and Zn 1-x Mg x Se crystals affect physical properties of mixed compounds [11]. However, due to instability at higher concentration, measurements for given semiconductors were carried out in the range of composition from x = 0 to x = 0.5.…”

Section: Introductionmentioning

confidence: 99%

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The composition effect on the thermal and optical properties across CdZnTe crystals

Strzałkowski¹

2016

J. Phys. D: Appl. Phys.

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“…12 In this work we report results of investigations of Au 2+ and Ge + ion-implanted silicon with the Photo Thermal Infrared Radiometry (PTR) method. 13 This method is used for investigations of semiconductor materials like other photoacoustic (PA), [14][15][16][17][18][19][20] photopyroelectric [21][22][23] and Modulated Free Carriers Absorption (MFCA) [24][25][26][27][28] methods. The PTR method has a wide range of different applications in investigations of many types of materials.…”

Section: Introductionmentioning

confidence: 99%

On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry

Chrobák

Maliński

2019

Journal of Elec Materi

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In this paper results of investigations of Au 2+ and Ge + ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers.

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Effect of lattice disorder on the thermal conductivity of ZnBeSe, ZnMgSe and ZnBeMgSe crystals

Cited by 13 publications

References 37 publications

Comparison of Theoretical Basics of Microphone and Piezoelectric Photothermal Spectroscopy of Semiconductors

Comparison of Theoretical Basics of Microphone and Piezoelectric Photothermal Spectroscopy of Semiconductors

The composition effect on the thermal and optical properties across CdZnTe crystals

On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry

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