Effect of La-doping on the properties of CaCu3Ti4O12 dielectric ceramics

Jin, Shan; Xia, Haiping; Zhang, Yuepin

doi:10.1016/j.ceramint.2007.10.007

Cited by 56 publications

(23 citation statements)

References 11 publications

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“…The presence of CuO liquid phase in CCTO and BaTiO 3 -based ceramics has been acknowledged as the main parameter promoting grain growth and ceramic densification because of its low melting point and liquid-phase effect. 11,15,22 Based on these results, a small amount of Sr 2+ entering the lattice of CCTO should enhance segregation of Cu-rich phase and promote grain growth since ST has a relatively high melting point, over 2000°C. Furthermore, a small additional amount of ST also assists in inducing better contact between neighboring grains and enhancing the mobility of GBs.…”

Section: Methodsmentioning

confidence: 99%

“…1,13,14 The relationship between the dielectric loss and frequency has been clearly shown in some research results. 1,5,6,10,11 From these studies, it can be concluded that the dielectric loss in CCTO ceramics mainly originates from semiconducting grains and insulating GBs. Numerous attempts have been made to reduce the current leakage by modifying the semiconducting properties and the interfacial structure of CCTO ceramics.…”

Section: Introductionmentioning

confidence: 99%

“…It has been reported that CCTO ceramics with larger grain size usually have higher dielectric constant. [10][11][12] Therefore, the effect of grain size on the dielectric constant is one of the pieces of evidence for the extrinsic mechanisms as elucidated by the IBLC model. 13,14 However, its relatively high dielectric loss is one of the main problems regarding use of CCTO in practical applications.…”

Section: Introductionmentioning

confidence: 99%

“…One effective approach is the use of elemental substitution such as La at Ca site or Zr and Ta at Ti site, which has been reported to reduce the dielectric loss in CCTO. 11,13 Another proposed approach for reducing the dielectric loss is to combine the high-dielectricconstant material with another insulating oxide with low tangent loss to improve the final material characteristics, e.g., GeO 2 , Cr 2 O 3 , and CaTiO 3 . [15][16][17] These results suggest that the appropriate amount of dopant can give rise to an increase of the GB resistance, which contributes to low dielectric loss.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric and Nonohmic Properties of CaCu3Ti4O12/SrTiO3 Ceramics

Xue

Liu

Chen

et al. 2015

Journal of Elec Materi

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In this work, (1 À x)CaCu 3 Ti 4 O 12 -xSrTiO 3 [(1 À x)CCTO/xST, x = 0% to 2%] ceramic samples were prepared by the solid-state reaction method. The dielectric and electrical properties of CaCu 3 Ti 4 O 12 (CCTO) and CaCu 3 Ti 4 O 12 /SrTiO 3 (CCTO/ST) ceramics were investigated. The results show that a small amount of Sr 2+ can enter the lattice of CCTO. The mean grain size of the ceramic samples increased greatly for x = 0.5% and then decreased for x = 0.75% to 2%. ST addition and Sr 2+ preferential occupancy in CCTO grains should be responsible for the change of the microstructure. Interestingly, the dielectric constant (e) of the 0.5% ST-added sample increased significantly while the dielectric loss (tan d) remained low. With further increase of the ST content, the e and tan d values of the CCTO ceramics decreased monotonically while the nonlinear current-voltage properties were significantly enhanced. The change in the potential barrier height is thought to be the main cause for the opposite behaviors in the dielectric properties and nonohmic characteristics.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Dielectric and Nonohmic Properties of CaCu3Ti4O12/SrTiO3 Ceramics

Xue

Liu

Chen

et al. 2015

Journal of Elec Materi

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“…In recent years, CaCu 3 Ti 4 O 12 [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] and related ACu 3-Ti 4 O 12 ceramic oxides (A = La 2/3 [3,6,16], Bi 2/3 [3,16,17], Y 2/3 [3,18], Na 1/2 Sm 1/2 [3,19], Na 1/2 Bi 1/2 [3,[20][21][22][23][24], Na 1/2 La 1/2 [25,26], Na 1/2 Y 1/2 [27,28], etc.) have received considerable attention due to their very high dielectric constants (e 0 * 10 3 -10 5 ) over the temperature range from 100 to 600 K. These ceramics also exhibited nonlinear current-voltage (or nonlinear current density-electric field, J-E) properties [4,7,19,23,26].…”

Section: Introductionmentioning

confidence: 99%

Effects of Y doping ions on microstructure, dielectric response, and electrical properties of Ca1−3x/2Y x Cu3Ti4O12 ceramics

Boonlakhorn

Kidkhunthod

Putasaeng

et al. 2015

J Mater Sci: Mater Electron

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The effects of Y 3? doping ions on ceramic microstructure, dielectric response, and electrical properties of Ca 1-3x/2 Y x Cu 3 Ti 4 O 12 (x = 0, 0.05, 0.10, and 0.15) ceramics prepared by a modified sol-gel method were investigated. A grain size of Ca 1-3x/2 Y x Cu 3 Ti 4 O 12 was reduced by Y 3? ions due to a solute drag effect. Substitution of CaCu 3 Ti 4 O 12 ceramics with suitable Y 3? concentration of 5 at. % can improve dielectric properties with high-dielectric permittivity of e 0 * 1.37 9 10 4 and low tand * 0.05 at 1 kHz. The results revealed that the relationship of the mean grain size and e 0 cannot be formulated. Using impedance spectroscopy analysis, the grain boundary resistance (R gb ) of Ca 1-3x/2 Y x Cu 3 Ti 4 O 12 ceramics was found to be strongly enhanced by Y 3? doping ions with x = 0.05. With further increasing x from 0.05 to 0.15, R gb decreased. While the grain resistance tended to increase with increasing Y 3?concentration (x = 0-0.15). Variation of a low-frequency tand value in all Ca 1-3x/2 Y x Cu 3 Ti 4 O 12 ceramics due to the influence of Y 3? substitution was well consistent with their changes in R gb values. Non-Ohmic properties of Ca 1-3x/2 Y x Cu 3 Ti 4 O 12 ceramics were also investigated.

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Colossal Permittivity Materials as Superior Dielectrics for Diverse Applications

Wang

Jie

Yang

et al. 2019

Adv Funct Materials

144

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Ever since the beginning of this century, many kinds of materials have been reported to demonstrate colossal permittivity (CP) or colossal dielectric constant exceeding 10 3 . Accordingly, such CP materials and their further modification and improvement to achieve enhanced CP performance for promising applications in modern electronics, sensors, energy storage, and multifunctional devices and so on have attracted extensive attention. In this review, 2 a general overview of the recent advances in CP materials is provided, ranging from their various categories, physical mechanisms, and modulation methods to promising applications.First, various classes of CP materials are categorized in terms of their structures and dielectric properties. Subsequently, this review provides an insight into the CP mechanisms in views of barrier layer capacitance, defect-dipole cluster and polaronic effect. Moreover, the strategies and prototypical works are introduced in some aspects, including the manipulation of CP properties by doping, percolative capacitors and the methods employed to enhance the dielectric behaviors in CP materials with different forms. We then discuss a wide range of applications based on CP materials, such as modern electronics and energy storage. Finally, the challenges and opportunities for further investigation of CP materials are highlighted in the summary and future perspectives.

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Effect of La-doping on the properties of CaCu3Ti4O12 dielectric ceramics

Cited by 56 publications

References 11 publications

Dielectric and Nonohmic Properties of CaCu3Ti4O12/SrTiO3 Ceramics

Dielectric and Nonohmic Properties of CaCu3Ti4O12/SrTiO3 Ceramics

Effects of Y doping ions on microstructure, dielectric response, and electrical properties of Ca1−3x/2Y x Cu3Ti4O12 ceramics

Colossal Permittivity Materials as Superior Dielectrics for Diverse Applications

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