Effect of junction depth on the performance of a diffused n+p silicon solar cell

Dhanasekaran, P. Caleb; Gopalam, B. S. V.

doi:10.1016/0038-1101(81)90172-6

Cited by 11 publications

(3 citation statements)

References 9 publications

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“…In summary, the efficiency decreased from 23.8% to about 19.9% with the increase in junction depth from 0.1 µm to 2.1 µm because of lower electron-hole pair generation. In previous work, it was shown that the efficiency decreased from 16.4% to 10.35% for junction depth of 0.1 µm and 2 µm, respectively [23].…”

Section: The Effect Of Junction Depthmentioning

confidence: 90%

On the Performance Limits for Mono Crystalline Silicon Solar Cells: A Comparative Study

AL-SULTAN

ALTINOLUK>

2022

Mugla Journal of Science and Technology

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In this study the solar cell parameters depending on semiconductor material’s electrical and physical properties were simulated and optimized with high accuracy and with a short simulation time. In order to obtain highly efficient solar cells in theory, later on for practical applications, Personal Computer One Dimensional (PC1D) software simulation program was used. The parameters were the thickness of emitter and absorber layers, type of absorber layer, doping profile, antireflective coating (ARC) materials and surface texturing. The results observed with the optimized parameters were compared and verified with the experimental results in the literature.

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Section: The Effect Of Junction Depthmentioning

confidence: 90%

On the Performance Limits for Mono Crystalline Silicon Solar Cells: A Comparative Study

AL-SULTAN

ALTINOLUK>

2022

Mugla Journal of Science and Technology

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“…This study deals with the optimization of the thickness of the base of an (n + /p/p + ) silicon solar cell [11]- [18] under monochromatic illumination [19] [20] in frequency modulation [21]- [27] performed under the conditions of applied magnetic field [24] and temperature [28] [29] [30] [31] [32].…”

Section: Introductionmentioning

confidence: 99%

Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n+/p/p+) Silicon Solar Cell Base Thickness Optimization under Long Wavelength Illumination

Diop¹,

Sow²,

Thiame³

et al. 2022

JEMAA

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The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in resonance at temperature (T opt ). For this same magnetic field, the diffusion coefficient of the photogenerated carriers by a monochromatic light in frequency modulation enters into resonance, at the frequency (ω c ). Under this double resonance in temperature and frequency, the diffusion coefficient is used in the expression of the recombination velocity of the minority charge carriers on the back side of the base of the solar cell (n + /p/p + ), to obtain, by a graphical method, the optimum thickness. A modeling of the results obtained shows a material saving (Si), in the development of the solar cell.

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“…1) The theoretical 1D or 3D study model (crystallography, grain size and thickness of different regions) [8] [9] [10].…”

Section: Introductionmentioning

confidence: 99%

AC Back Surface Recombination Velocity in n＋-p-p＋ Silicon Solar Cell under Monochromatic Light and Temperature

Fall¹,

Gaye²,

Diarisso³

et al. 2021

JEMAA

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Excess minority carrier's diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of monochromatic illumination is resolved. Using conditions at the base limits involving recombination velocities Sf and Sb, respectively at the junction (n + /p) and back surface (p + /p), the AC expression of the excess minority carriers' density δ (T, ω) is determined. The AC density of photocurrent J ph (T, ω) is represented versus recombination velocity at the junction for different values of the temperature. The expression of the AC back surface recombination velocity Sb of minority carriers is deduced depending on the frequency of modulation, temperature, the electronic parameters (D (ω)) and the thickness of the base. Bode and Nyquist diagrams are used to analyze it.

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Effect of junction depth on the performance of a diffused n+p silicon solar cell

Cited by 11 publications

References 9 publications

On the Performance Limits for Mono Crystalline Silicon Solar Cells: A Comparative Study

On the Performance Limits for Mono Crystalline Silicon Solar Cells: A Comparative Study

Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n<sup>+</sup>/p/p<sup>+</sup>) Silicon Solar Cell Base Thickness Optimization under Long Wavelength Illumination

AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature

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Effect of junction depth on the performance of a diffused n+p silicon solar cell

Cited by 11 publications

References 9 publications

On the Performance Limits for Mono Crystalline Silicon Solar Cells: A Comparative Study

On the Performance Limits for Mono Crystalline Silicon Solar Cells: A Comparative Study

Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n&lt;sup&gt;+&lt;/sup&gt;/p/p&lt;sup&gt;+&lt;/sup&gt;) Silicon Solar Cell Base Thickness Optimization under Long Wavelength Illumination

AC Back Surface Recombination Velocity in n&lt;sup&gt;＋&lt;/sup&gt;-p-p&lt;sup&gt;＋&lt;/sup&gt; Silicon Solar Cell under Monochromatic Light and Temperature

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Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n<sup>+</sup>/p/p<sup>+</sup>) Silicon Solar Cell Base Thickness Optimization under Long Wavelength Illumination

AC Back Surface Recombination Velocity in n<sup>＋</sup>-p-p<sup>＋</sup> Silicon Solar Cell under Monochromatic Light and Temperature