Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO x RRAM devices

Zhong, Chia Wen; Tzeng, Wen Hsien; Liu, Kou Chen; Lin, Horng-Chih; Chang, Kow–Ming; Chan, Yi Chun; Kuo, Chun Chih; Chen, Pang Shiu; Lee, Heng Yuan; Chen, Frederick; Tsai, M. J.

doi:10.1016/j.surfcoat.2012.07.039

Cited by 33 publications

(18 citation statements)

References 12 publications

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“…Conduction and interfacial growth properties of TCO are strongly determined by its fabrication parameter. However, still few investigations have been conducted to explain phenomena in RRAM operation due to different properties of TCO [ 219 , 225 – 227 ].…”

Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

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Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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“…The lower oxygen ratio for the HfO x /ITO stack indicates that oxygen in the HfO x may have been "scavenged" by the bottom ITO layer. Studies 36,37 have found that an ITO film sputter-deposited in an argon-only (i.e., oxygen-absent) ambient has a high concentration of oxygen vacancies, which give the film an ntype conductivity. An oxygen deficient ITO layer in turn promotes the migration of oxygen from the HfO x layer, 38 thus making the latter also more oxygen deficient.…”

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confidence: 99%

Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch

Zhang

Ang

Zhou

et al. 2017

Applied Physics Letters

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The narrow read-window of most complementary resistive switches proposed to-date poses a significant challenge to array level implementation, as inherent variations in the set and reset voltages result in an unacceptably small read margin. In this work, we present the asymmetrical ITO/HfO x / TiN complementary resistive switch, with a significantly enlarged positive read window of 1.6 V as compared to the much narrower window of 0.5 V of the symmetrical TiN/HfO x /TiN switch. A read margin of 1.1 V is obtained after accounting for statistical variations, representing a significant improvement over the 0.1 V margin of the symmetrical counterpart. Analyses show that the enlarged read window may be ascribed to two important attributes: (1) the stronger affinity of ITO for oxygen, which leads to a reduced positive set voltage and (2) a larger work function of the ITO, resulting in an increase in the positive reset voltage.

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“…Indeed, according to the high chemical affinity of oxygen towards aluminum, it is likely that a thin layer of alumina is present on the surface of the AlN samples 23 . Therefore, the high oxygen content under the nitrogen-poor environment constrains further dissolution of the AlO x barrier interlayer during the set processes, leading to fluctuating transient currents at the high resistance state that increase the V SET mean value and ΔR H 33 . Conversely, the high oxygen content stabilizes the reformation of the AlO x barrier interlayer during the reset process, leading to the reduced ΔR L .…”

Section: Resultsmentioning

confidence: 99%

Transparent Memory For Harsh Electronics

Retamal

Yang

et al. 2017

Sci Rep

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As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm−2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.

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Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO x RRAM devices

Cited by 33 publications

References 12 publications

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch

Transparent Memory For Harsh Electronics

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