Effect of island coalescence on structural and electrical properties of InN thin films

Lebedev, V.; Cimalla, V.; Morales, F. M.; Lozano, J.; González, David; Mauder, Ch.; Ambacher, O.

doi:10.1016/j.jcrysgro.2007.02.003

Cited by 4 publications

(1 citation statement)

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“…The latter results in grain boundaries that detrimentally influence the topographical and electrical properties of the deposited epilayers , e.g., carrier mobility and free carrier concentration. 101 The control of topographic properties of InGaN layers (i.e., a smooth surface) are essential for the fabrication of heterostructures and the integration of multiple quantum wells MQWs and engineered assembled nanocomposites. The unique temporal precursor injecting system utilized in the high-pressure CVD approach is promising for controlling the growth surface chemistry processes to stabilize indium-rich InGaN alloys difficult to achieve otherwise.…”

Section: Inn and Indium-rich Ingan Epilayers And Heterostructuresmentioning

confidence: 99%

CHAPTER 8. The Group III-Nitride Material Class: from Preparation to Perspectives in Photoelectrocatalysis

Collazo¹,

Dietz²

Energy and Environment Series

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In this chapter, the physical properties of group III-nitride compound semiconductors are reviewed in the context to act as semiconducting material in photoelectrocatalytic solar fuel structures. The band alignments in the InN-GaN-AlN-InN alloy system are summarized and discuss with respect to potential catalysts HOMO and LUMO states, providing efficient charge transfer in photoelectrochemical cell structures. The present status in group III-nitride materials fabrication and ternary alloy formation, stabilization and integration into envisioned materials structures is presented, together with challenges that have to be addressed to enable the full potential of group III-nitrides to contribute to high-efficient energy generation and utilization.

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Section: Inn and Indium-rich Ingan Epilayers And Heterostructuresmentioning

confidence: 99%