Effect of ion energy on charge loss from Floating Gate memories

Abstract

Heavy ions typical of the space environment have energies which exceed by orders of magnitude those available at particle accelerators. In this paper we are irradiating state of the art Floating Gate memories by using a medium energy (SIRAD) and a high energy (RADEF) facilities. The corruption of stored information decreases when increasing ion energy. The proposed model deals with the broader track found for higher energy ions. Implications for testing procedures and for reliability considerations are discussed.