Effect of intrinsic stress on the optical properties of nanostructured ZnO thin films grown by rf magnetron sputtering

Kumar, Rajesh; Khare, Neeraj; Kumar, Vijay; Bhalla, Gaurav

doi:10.1016/j.apsusc.2008.04.012

Cited by 109 publications

(41 citation statements)

References 28 publications

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“…The σ film values are observed to be about 2.509 GPa, 2.092 GPa, 0.107 GPa and 0.106 GPa for the GZO thin films deposited at the growth temperatures of 300°C, 350°C, 400°C and 450°C, respectively. It indicates that the residual stress in the thin films is obviously relaxed with the increase of growth temperature, which is in good agreement with the results obtained by Kumar et al [37] in ZnO film. 3a depicts the wide-scan XPS spectrum of the GZO thin films deposited at the growth temperature of 400°C.…”

Section: Thin Films Characterizationsupporting

confidence: 82%

Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Long

et al. 2015

Materials Science-Poland

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Highly conductive gallium-doped zinc oxide (GZO) transparent thin films were deposited on glass substrates by RF magnetron sputtering. The deposited films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), four-point probe and UV-Vis spectrophotometer, respectively. The effect of growth temperature on the structure and optoelectrical properties of the films was investigated. The results demonstrate that high quality GZO films oriented with their crystallographic c-axis perpendicular to the substrates are obtained. The structure and optoelectrical properties of the films are highly dependent on the growth temperature. It is found that with increasing growth temperature, the average visible transmittance of the deposited films is enhanced and the residual stress in the thin films is obviously relaxed. The GZO films deposited at the growth temperature of 400°C, which have the largest grain size (74.3 nm), the lowest electrical resistivity (1.31 × 10 −3 Ω·cm) and the maximum figure of merit (1.46 × 10 −2 Ω −1 ), exhibit the best optoelectrical properties. Furthermore, the optical properties of the deposited films were determined by the optical characterization methods and the optical energy-gaps were evaluated by extrapolation method. A blue shift of the optical energy gap is observed with an increase in the growth temperature.

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Section: Thin Films Characterizationsupporting

confidence: 82%

Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Long

et al. 2015

Materials Science-Poland

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“…There have been lot of studies on the luminescent properties of ZrO 2 , but still there is a lack of clarification for the luminescent mechanisms in ZrO 2 . In general, luminescence from NPs is thought to be related to defects and/or impurities in the system [25,[29][30][31][32]. In ZrO 2 -NPs, the involvement of mid gap traps such as surface defects and oxygen vacancies defects (F+ centers) make contribution towards luminescence properties.…”

Section: Temperature ( • C) Phases Compositionmentioning

confidence: 99%

Photoluminescence quenching of Zirconia nanoparticle by surface modification

Sidhu

Kaushik

Rana

et al. 2015

Applied Surface Science

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“…Scherrer's formula [37], the internal stress σ, derived from the change in the 'c' lattice parameter [38] …”

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confidence: 99%

Influence of the oxygen partial pressure and post-deposition annealing on the structure and optical properties of ZnO films grown by dc magnetron sputtering at room temperature

Yuste¹,

Galindo

Caretti³

et al. 2011

J. Phys. D: Appl. Phys.

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7A systematic study for the optimization of the deposition process of ZnO thin films grown by 8 DC magnetron sputtering at room temperature was carried out using different oxygen partial 9 pressures and deposition times. We have established a correlation between the oxygen partial 10 pressure, the chemical composition and the crystalline structure of the films. 11Stoichiometric and highly oriented ZnO thin films along the (002) crystal plane with very good 12 optical performance were obtained for a relative oxygen gas flow of 20% in the gas mixture. 13Higher O 2 concentrations resulted in non-stoichiometric ZnO with an excess of oxygen, which 14 exhibited a lower degree of crystallinity and slightly higher band-gap energy.

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Effect of intrinsic stress on the optical properties of nanostructured ZnO thin films grown by rf magnetron sputtering

Cited by 109 publications

References 28 publications

Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Photoluminescence quenching of Zirconia nanoparticle by surface modification

Influence of the oxygen partial pressure and post-deposition annealing on the structure and optical properties of ZnO films grown by dc magnetron sputtering at room temperature

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