Effect of Internal Radiation on Heat Transfer during Ti:sapphire Crystal Growth Process by Heat Exchanger Method

Unsteady melt heat flow coupling optimization method for sapphire crystal seeding growth by the Kyropoulos method

“…Its unique lattice structure, excellent mechanical properties, and good thermal properties make sapphire an ideal substrate material for semiconductor lighting, large-scale integrated circuits, and other fields, especially for light emitting diodes and diode lasers in the semiconductor industry. For the preparation of single large-diameter sapphire single crystals, the Kyropoulos (Ky) 4 method, Czochralski (Cz) 5 method or heat exchange method 6 are mainly used. The production of high quality sapphire single crystals is an important goal of the sapphire industry.…”