Effect of intermediate heat treatment on mechanical properties of SiCf/SiC composites with BN interphase prepared by ICVI

Udayakumar, A.; Ganesh, A. Sri; Raja, S.; Balasubramanian, M.

doi:10.1016/j.jeurceramsoc.2010.12.018

Cited by 116 publications

(22 citation statements)

References 29 publications

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“…To overcome the brittle nature of SiC, continuous SiC fiber reinforced SiC matrix composites (SiC/SiC) are designed to have a pseudoductile and predictable fracture mode and tailorable physical and mechanical properties while taking advantage of most of the inherent merits of monolithic SiC . The conventional fabrication processes of SiC/SiC composites are melt infiltration (MI), chemical vapor infiltration, nanoinfiltration and transient eutectic, and polymer impregnation and pyrolysis (PIP) processes. Among them, PIP has advantages in the viewpoint of large‐scale components fabrication with complex shapes, microstructural control, and low fabrication cost …”

Section: Introductionmentioning

confidence: 99%

Microstructure and Mechanical Properties of Compact SiC/SiC Composite Fabricated with an Infiltrative Liquid Precursor

2015

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Continuous SiC fiber reinforced SiC matrix composites (SiC/ SiC) have been studied and developed for high temperature and fusion applications. In this study, SiC/SiC composite was fabricated by polymer impregnation and pyrolysis process with LPVCS, a liquid precursor with active Si-H and -CH=CH 2 groups. The cross-link and ceramization processes of LPVCS were studied and SiC/SiC composite was fabricated with LPVCS. The porosity and mechanical properties of the SiC/ SiC composite was investigated, and the results indicated that the SiC/SiC composite exhibited low porosity and superior mechanical properties owing to the compact matrix derived from LPVCS.

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Section: Introductionmentioning

confidence: 99%

Microstructure and Mechanical Properties of Compact SiC/SiC Composite Fabricated with an Infiltrative Liquid Precursor

2015

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“…BN interface has several advantages over PyC, such as its high oxidation starting temperature ($ 800 1C) compared to PyC ($ 400 1C) [7] and high oxidation resistance for the formation of boron oxide (B 2 O 3 ) liquid caused by oxygen diffusion. However, the BN interface still cannot meet the requirement in high temperature and water-oxygen environments for longterm application due to its fast volatilization B 2 O 3 and reaction between B 2 O 3 and water at high temperature [8].…”

Section: Introductionmentioning

confidence: 99%

Tensile fracture behavior and strength distribution of SiCf/SiC composites with different SiBN interface thicknesses

Liu

Chai

Qin

et al. 2015

Ceramics International

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“…The 3C-SiC thin films are deposited on a thermally oxidized Si (100) substrate using a resistively heated vertical hot wall LPCVD reactor (M/s. Archer Technicoat limited, UK) and details of the reactor are reported elsewhere [13]. The precursors used are MTS (Purity: 99.8 %, M/s.…”

Section: Experimentationmentioning

confidence: 99%

Growth and effect of deposition pressure on microstructure and electrical properties of 3C-SiC thin films deposited using methyltrichlorosilane single precursor

Latha¹,

Udayakumar²,

Prasad³

2013

Int. J. Thin Film Sci. Tec.

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This paper presents effect of deposition pressure on the microstructure and electrical properties of 3C-SiC (111) thin films. These films are deposited at a temperature of 1040 • C and pressures of 1.5, 1.8, 2.5 and 2.7 mbar, on thermally oxidized Si (100) substrates from a mixture of methyltrichlorosilane and hydrogen gas using a vertical hot wall, low pressure chemical vapour deposition (LPCVD) reactor. The above properties are investigated for all films using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Scanning electron microscopy (SEM) and four probe technique. An FTIR spectrum shows the formation of Si-C bonding of deposited films. The SEM and XRD investigations show improvement in the grain size and crystallanity, decrease in strain and dislocations of the films with increase in the deposition pressure from 1.5 to 2.5 mbar. AFM investigations show decrease in roughness of the films with increase in the deposition pressure from 1.55 to 2.5 mbar. The sheet resistance of 3C-SiC thin films is found to decrease with increase in temperature in the range of 35 to 550 • C. Comparing all the films, 3C-SiC thin films deposited at a pressure of 2.5 mbar and temperature of 1040 • C exhibited improved structural and electrical properties.

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Effect of intermediate heat treatment on mechanical properties of SiCf/SiC composites with BN interphase prepared by ICVI

Cited by 116 publications

References 29 publications

Microstructure and Mechanical Properties of Compact SiC/SiC Composite Fabricated with an Infiltrative Liquid Precursor

Microstructure and Mechanical Properties of Compact SiC/SiC Composite Fabricated with an Infiltrative Liquid Precursor

Tensile fracture behavior and strength distribution of SiCf/SiC composites with different SiBN interface thicknesses

Growth and effect of deposition pressure on microstructure and electrical properties of 3C-SiC thin films deposited using methyltrichlorosilane single precursor

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