Effect of interfacial SiO2−y layer and defect in HfO2−x film on flat-band voltage of HfO2−x/SiO2−y stacks for backside-illuminated CMOS image sensors

Na, Heedo; Lee, Jimin; Jeong, Jae Yeon; Kim, Sang Woo; Sohn, Hyunchul

doi:10.1007/s00339-018-1659-5

Cited by 7 publications

(1 citation statement)

References 24 publications

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“…The lower binding energies of 18.1 eV and 18.7 eV, which are the weaker spin-orbit doublet peaks, may be due to the oxygen deficiency of Hf n+ –O (n < 4), which comes from HfSiOx. These binding energies are consistent with previously published data [ 61 ]. Figure 1 (d) shows the XPS Si2p core-level spectra.…”

Section: Resultssupporting

confidence: 93%

Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications

et al. 2023

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Memristors, owing to their uncomplicated structure and resemblance to biological synapses, are predicted to see increased usage in the domain of artificial intelligence. Additionally, to augment the capacity for multilayer data storage in high-density memory applications, meticulous regulation of quantized conduction with an extremely low transition energy is required. In this work, an a-HfSiOx-based memristor was grown through atomic layer deposition (ALD) and investigated for its electrical and biological properties for use in multilevel switching memory and neuromorphic computing systems. The crystal structure and chemical distribution of the HfSiOx/TaN layers were analyzed using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The Pt/a-HfSiOx/TaN memristor was confirmed by transmission electron microscopy (TEM) and showed analog bipolar switching behavior with high endurance stability (1000 cycles), long data retention performance (104 s), and uniform voltage distribution. Its multilevel capability was demonstrated by restricting current compliance (CC) and stopping the reset voltage. The memristor exhibited synaptic properties, such as short-term plasticity, excitatory postsynaptic current (EPSC), spiking-rate-dependent plasticity (SRDP), post-tetanic potentiation (PTP), and paired-pulse facilitation (PPF). Furthermore, it demonstrated 94.6% pattern accuracy in neural network simulations. Thus, a-HfSiOx-based memristors have great potential for use in multilevel memory and neuromorphic computing systems. Graphical Abstract

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Section: Resultssupporting

confidence: 93%