Abstract:Recently, the Fermi level has been demonstrated to be pinned in GaAs semiinsulating ultrathin (<100 A) films grown at low temperatures [1]. This allows one to construct a detector with “internal” photocurrent amplification. The amplification effect compensates losses in sensitivity due to the small width of light-sensitive layer which absorbs 10 — 50 % of incident radiation. We fabricate photodetector structures with external quantum efficiency more than 1 for visible region. Photogenerated carriers in the … Show more
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