Effect of initial process conditions on the structural properties of AlN films

Paduano, Qing; Weyburne, David; Jasiński, Jacek B.; Liliental‐Weber, Z.

doi:10.1016/j.jcrysgro.2003.11.017

Cited by 84 publications

(67 citation statements)

References 10 publications

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“…As a result, domains with a V-like shape are formed [20]. The density of these domains can be controlled by the growth conditions [22]. Here, we report formation of similar V-like IDs in InN films grown on c-plane sapphire.…”

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confidence: 61%

V-shaped inversion domains in InN grown on c-plane sapphire

Jasiński

Liliental‐Weber

et al. 2004

Applied Physics Letters

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Inversion domains with a V-shape were found to nucleate inside a Mg-doped InN heteroepitaxial layer. They resemble Al-polarity domains, observed recently, in Npolarity AlN films. However, the angle between the side-walls of the V-shaped domain and the c-axis differs in these two cases. In InN, this angle is almost two times bigger than that reported for AlN. The origin of V-shaped inversion domains in InN film is not yet clear. a

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confidence: 61%

V-shaped inversion domains in InN grown on c-plane sapphire

Jasiński

Liliental‐Weber

et al. 2004

Applied Physics Letters

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“…This result indicates that the film contains many inversion domains, though the XRD full-width at halfmaximum of AlN(002) rocking curve is ∼470 arcsec. Such surface condition is often observed in films grown by substrate nitridation at high temperature [5].…”

Section: Methodsmentioning

confidence: 83%

“…AlN epilayers often consist of mixed Al-and Npolarity domains [4][5][6][7]. Consequently they exhibit rough surface morphology because the growth rate significantly depends on the polarity.…”

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confidence: 99%

Polarity control of AlN by poling in the crystal growth

Ota

Inushima

2011

Phys. Status Solidi C

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We present a new technique for controlling the polarity of AlN grown by metal‐organic chemical vapor deposition on sapphire. We apply electric field along the c‐axis throughout the crystal growth process and Al‐ or N‐polarity AlN is obtained according to the direction of the electric field.It turns out that the polarization of pyroelectric AlN can be changed by the external field applied at the initial growth stage. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…films with inversion domains (IDs) with a different polarity) of GaN [50] or AlN [51] are typically formed without sapphire nitridation. On the other hand, highly crystalline nitride layers with N-polarity are formed on nitridated substrates [49,51]. They still contain IDs with metal-polarity [52], which lead to formation of hexagonal facets at the surface.…”

Section: CMmentioning

confidence: 99%

Classic and novel methods of dislocation reduction in heteroepitaxial nitride layers

Jasiński

2005

phys. stat. sol. (c)

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Due to the lack of commercially available large size native substrates, reduction of threading dislocations remains one of the main challenges of group III-nitride based technology. This paper reviews major methods aimed at producing high-quality heteroepitaxial nitride films with reduced densities of dislocations. Methods such as, incorporation of buffer layers, substrate nitridation, interlayer insertion, silaneammonia treatment, lateral overgrowth and growth of thick nitride layers are reviewed. Advantages and drawbacks of these methods are discussed and compared.Introduction One of the main problems of the group III nitride-based technology is the lack of commercially available large-size native substrates. Sapphire or 6H-SiC substrates, are typically chosen for most nitride-based applications. These substrates however, are poorly matched to nitride films. There is, for example, a lattice mismatch of 16 and 13 % between c-plane sapphire substrates and GaN and AlN layers, respectively. As a result, the growth of nitride films directly on such substrates leads to the formation of three-dimensional (3D) islands [1,2]. In the initial stage of the growth, these slightly twisted/tilted islands coalesce leading to the formation of threading dislocations. Also, threading dislocations are formed to reduce the biaxial compressive strains [3,4] resulting from the lattice mismatch during the growth, as well as from the mismatch in thermal expansion coefficient between the layer and the substrate during the post-growth cooling. As a consequence high densities of threading dislocations, usually in the range of 10

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Effect of initial process conditions on the structural properties of AlN films

Cited by 84 publications

References 10 publications

V-shaped inversion domains in InN grown on c-plane sapphire

V-shaped inversion domains in InN grown on c-plane sapphire

Polarity control of AlN by poling in the crystal growth

Classic and novel methods of dislocation reduction in heteroepitaxial nitride layers

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