Effect of Induced Stimuli on the Leakage Current of Operative Oxide-based Devices inside a TEM

Recalde, Oscar; Jiang, Tianshu; Eilhardt, Robert; Zintler, Alexander; Ruan, Yating; Arzumanov, A.V.; Omme, J. Tijn van; Pivak, Gin; Perez-Garza, Hector H.; Komissinskiy, Philipp; Alff, Lambert; Molina‐Luna, Leopoldo

doi:10.1017/s1431927622003671

Microscopy and Microanalysis

2022

DOI: 10.1017/s1431927622003671

|View full text |Cite

Effect of Induced Stimuli on the Leakage Current of Operative Oxide-based Devices inside a TEM

Oscar Recalde

Tianshu Jiang

Robert Eilhardt

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

Publication Types

Select...

Article1

Relationship

Self Cite1

Independent0

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is worth noting that the TEM specimen was fixed on the chip surface solely by van der Waals forces, thereby avoiding any contamination from FIB-deposited material. 45 At 20 C, as illustrated in Fig. 3(a), the a 1 /a 2 90 ferroelastic needle domain groups align parallel to the [ 110] direction, corroborating our optical observations (Figs.…”

supporting

confidence: 86%

Observation of dislocation-controlled domain nucleation and domain-wall pinning in single-crystal BaTiO3

Jiang,

Ni,

Recalde-Benitez

et al. 2023

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Electro-mechanical interactions between topological defects and domain walls play a key role in the macroscopic response of bulk and thin-film ferroelectrics. The applications of ferroelectrics are derived from their inherent ability to nucleate new domains and to move the domain walls that separate adjacent domains. Here, we report dislocation-mediated domain nucleation in single-crystal BaTiO3, achieved by dislocations generated via high-temperature uniaxial compression on a notched sample. We also present a direct observation of domain-wall pinning of 90° ferroelastic domain walls by dislocations using in situ transmission electron microscopy. Dense and well-aligned “forest” dislocations, featuring {100}⟨100⟩ slip systems oriented in the out-of-plane [001] direction, exclusively nucleate in-plane domain variants. We reveal that the 90° domain walls are strongly pinned by imprinted dislocations due to the presence of their associated stress fields. Our findings may advance our understanding of the control of defects in ferroelectrics and propose a strategy applicable to both emerging nanoelectronic and bulk applications.

show abstract

supporting

confidence: 86%

Observation of dislocation-controlled domain nucleation and domain-wall pinning in single-crystal BaTiO3

Jiang,

Ni,

Recalde-Benitez

et al. 2023

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Effect of Induced Stimuli on the Leakage Current of Operative Oxide-based Devices inside a TEM

Cited by 1 publication

References 4 publications

Observation of dislocation-controlled domain nucleation and domain-wall pinning in single-crystal BaTiO3

Observation of dislocation-controlled domain nucleation and domain-wall pinning in single-crystal BaTiO3

Contact Info

Product

Resources

About