Effect of impurities on thermal stability of pseudomorphically strained Si:C layer

Chuang, Yao-Teng; Wang, Shenghao; Woon, Wei Yen

doi:10.1063/1.3572339

Cited by 10 publications

(11 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similarly, in the presence of impurities such as deactivated phosphorous or injected oxygen, the easier pathway for strain relaxation in strained Si:C is local volume compensation through formation of C sub -interstitial complexes by gettering of interstitial atoms around C sub atoms. 16 From literature, it is known that by simply treating the silicon surface with HF prior to dopant activation annealing, significant retardation of TED was found due to passivation of surface dangling bonds by hydrogen. 28 In our case, with HF pretreatment prior to post-annealing, the lack of surface oxide as a seed for oxygen diffusion and oxidation enhanced interstitial injection into bulk may explain the strain relaxation reduction observed.…”

Section: Discussionmentioning

confidence: 99%

“…Recent researches revealed that undesirable strain relaxation in Si:C S/D occurs upon being provided additional thermal energy during post-processes after junction formation. 15,16 It is therefore important to understand the detailed mechanisms involved in strain relaxation processes and find out the limit of strain-doping coexistence in Si:C S/D in order to realize integration of this technology into microelectronic devices in near future.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

On the doping limit for strain stability retention in phosphorus doped Si:C

Chuang

Woon

2014

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron x-ray diffraction Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below b-SiC precipitation threshold temperature, especially for the highest phosphorus doped case. Most of the substitutional carbon is retained and no further b-SiC formation can be found for all samples investigated. Volume compensation through gettering of interstitial atoms around substitutional carbon is considered as a probable mechanism for the observed strain relaxation. The strain relaxation effect can be further reduced with HF treatment prior to post-annealing process. We found an upper limit for ion implant dose (<1 Â 10 14 atom/cm 2 ) for the retention of strain stability in phosphorus doped Si:C. V C 2014 AIP Publishing LLC. [http://dx.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

On the doping limit for strain stability retention in phosphorus doped Si:C

Chuang

Woon

2014

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…10. The weak stress from Si:C layers using Cascade-1 is considered to be caused by quite surplus interstitial C at the surface region [6]. Furthermore, low R s in Si:C layers with and without NiPtSi formed by Cascade-2 can be achieved, as shown in Fig.…”

Section: Impact Of Cascade C 7 H X Implantation On Channel Stress Andmentioning

confidence: 95%

Si:C-S/D Engineering using Cascade C<sub>7</sub>H<sub>x</sub> Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D

Yamaguchi¹,

Kawasaki²,

Yamashita³

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

View full text Add to dashboard Cite

“…Strain was measured by high-resolution X-ray diffractometry (HRXRD) using Cu K¡ 1 X-ray diffraction around the (004) Si peak. 19) Since the solid solubility of C in Si is only of the order of 10 17 atoms/cm 3 , the naive assumption of full incorporation of implanted C ions into the Si lattice by SPER may not be correct, contrary to the fully miscible case of Ge. 17) Furthermore, there may be complicated interplays between the implanted dopant impurities and C. For example, enhanced dopant activation upon C + co-implant was reported.…”

mentioning

confidence: 99%

Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon

Hu¹,

Liang²,

Woon³

2015

Appl. Phys. Express

View full text Add to dashboard Cite

The drop analyser, also termed the tensiograph, is an optical fibre-based instrument system for monitoring liquids. A comprehensive assessment of the drop analyser used as a UV-visible spectrophotometer has been undertaken employing both experimental and theoretical studies. A model of the tensiograph signal (tensiotrace) has been developed using a ray-tracing approach to accurately predict the form of the tensiotrace as an aid to drop spectroscopy. An analytical equation is derived for quantitative drop spectroscopy and the form of the equation has been experimentally tested. The equation applies to both the case of a growing drop and the situation in which the drop volume is held stationary. Measurements on both stationary and moving drops are of practical value. Modelling has been used to compute the average path length of the coupled light in the drop to give a result that compares favourably with values obtained from experimental measurements. An optimized method has been identified for quantitative drop spectroscopy measurements. Results from UV-visible studies on both pollutants in water and pharmaceuticals demonstrate the utility of this approach. Two key matters relating to the practicalities of drop spectroscopy are then discussed. Some experimental studies have been made to ascertain the practical limit in analyte concentration above which variations in transmitted light from the drop shape variations result. Here, tabulated information on a representative range of liquid types has been provided as a guide to optimized spectroscopic drop analysis. Secondly, the handling of micro-volume samples is discussed. The paper concludes with a brief evaluation of the usefulness of this drop spectroscopy approach, but specifically points to the importance of drop spectroscopy for nanoscience applications.

show abstract

Effect of impurities on thermal stability of pseudomorphically strained Si:C layer

Cited by 10 publications

References 18 publications

On the doping limit for strain stability retention in phosphorus doped Si:C

On the doping limit for strain stability retention in phosphorus doped Si:C

Si:C-S/D Engineering using Cascade C<sub>7</sub>H<sub>x</sub> Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D

Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon

Contact Info

Product

Resources

About