Effect of impurities on initial stages of phase formation for the system of Ti deposited on (001) Si–Ge layers

Beregovsky, M.; Levin, Igor; Berner, A.; Eizenberg, M.; Demuth, Volker; Strunk, H. P.

doi:10.1016/s0040-6090(98)01051-7

Cited by 4 publications

(5 citation statements)

References 18 publications

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“…Indeed, presence of C is known to favor the formation of metal rich silicides, even in the case of refractory metals, where in the absence of C only disilicides are formed. 17,18 The local improvement of the Schottky barrier observed at 800°C does not correlate with any significant change in the atomic concentration depth profiles of Fig. 3 or the Pt binding energy depth profiles of Fig.…”

Section: Discussionmentioning

confidence: 88%

“…The 4H-SiC wafer ͑CREE Research, Inc.͒ used in this work was n type, 280 m thick, with a 10-m-thick n-type epilayer grown on its Si face. The substrate and the epilayer were doped with nitrogen to levels of 7.3ϫ10 17 and 1 ϫ10 16 /cm 3 , respectively. Prior to deposition, the samples were degreased in organic solvents in an ultrasonic bath ͑trichlorethylene, acetone, and methanol, sequentially͒.…”

Section: A Sample Preparationmentioning

confidence: 99%

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Thermal stability of Pt Schottky contacts to 4H–SiC

Shalish

Oliveira

Shapira

et al. 2000

Journal of Applied Physics

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Depth profiles by x-ray photoelectron spectroscopy have been used in conjunction with currentvoltage measurements to study the thermal stability of a 50-nm-thick Pt contact to n-4H-SiC substrate. A reaction between the Pt and the SiC substrate is observed at temperatures of 600°C and above. Annealing below that temperature improves the ideality and the uniformity of the Schottky characteristics, while annealing above this temperature degrades the electrical performance and uniformity. Thermodynamic stability is not reached even after annealing for 1 h at 900°C. A local improvement of the characteristics at 800°C is correlated with the formation of a second graphite film in the Pt-SiC reaction.

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Section: Discussionmentioning

confidence: 88%

Section: A Sample Preparationmentioning

confidence: 99%

Thermal stability of Pt Schottky contacts to 4H–SiC

Shalish

Oliveira

Shapira

et al. 2000

Journal of Applied Physics

Self Cite

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“…For the development of nanodimensional silicide films of the transition metals with optimum properties it is necessary to take into account not only the influence of physic-technological parameters of their production but also to define the role of the size factor that influenced by the film thickness, size of crystallites on properties [1][2][3][4][5][6][7][8][9][10][11]. The purpose of the research was to study the influence of annealing environment and the film thickness on the phase formation and the structure of the Ti/Si(100) and (Ti+Si) /Si(100) thin films, being of practical interest.…”

Section: Introductionmentioning

confidence: 99%

Influence of Annealing Environment and Film Thickness on the Phase Formation in the Ti/Si(100) and (Ti +Si)/Si(100) Thin Film Systems

Makogon

Pavlova

Sidorenko

et al. 2007

DDF

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Influence of an annealing environment and film thickness on the phase formation in the Ti(30 nm)/Si(100), [(Ti+Si) 200 nm]/Si(100) thin film systems produced by magnetron sputtering and the Ti(200 nm)/Si(100) thin film system produced by electron-beam sputtering were investigated by X-ray and electron diffraction, Auger electron spectroscopy (AES), secondary ion mass-spectrometry (SIMS) and resistivity measurements. Solid-state reactions in the thin film systems under investigation were caused by diffusion processes during annealing in the different gas environments: under vacuum of 10-4 - 10-7 Pa, flow of nitrogen and hydrogen. It is shown that the decrease of Ti layer thickness from 200 to 30 nm in the Ti/Si(100) film system causes the increase of the transition temperature of the metastable C49 TiSi2 phase to the stable C54 TiSi2 phase up to 1070 K at vacuum annealing. During annealing in the nitrogen flow of the Ti(30 nm)/Si(100) thin film system the C49 TiSi2 is the first crystal phase which is formed at 870 K. For annealings of the [(Ti+Si) 200 nm]/Si(100) thin film system by impulse heating method or for furnace annealings in inert gas atmosphere of N2, Ar, H or higher vacuum (10-5 Pa) the crystallization process has two stages: the first metastable C49 TiSi2 phase is formed at 870 K and then at higher temperatures it is transformed to the stable C54 TiSi2 phase.

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“…Results of the structural characterization for this sample were reported in Ref. [10]. It has been found that the heat treatment leads to the formation of a single layer of about 25 nm thick on the sample surface.…”

Section: Examples Of Analysismentioning

confidence: 88%

“…2 mark the boundaries between different phase layers accounting for the lateral resolution of EDS/TEM. In particular, The second sample studied was Ti/Si-Ge/Si with a thin overlayer of Ti (10 nm) before heat treatment, that was annealed at 615 C for 0.5 h. This temperature corresponds to the initial stages of phase formation in the Ti-Si-Ge system [10]. Results of the structural characterization for this sample were reported in Ref.…”

Section: Examples Of Analysismentioning

confidence: 99%

Quantitative Analysis of Ti-Si-Ge/Si-Ge/Si Structures by EDS and AES

2000

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A method for quantitative analysis of Ti-SiGe/Si-Ge/Si structures with submicron thick layers by energy dispersive spectroscopy (EDS) in transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) was developed. Quantitation of the results of both AES and EDS techniques was performed on the basis of a single reference specimen for the Ti-Si-Ge system comprising a uniform layer of the Ti(Si 0.85 Ge 0.15 ) 2 phase on a silicon substrate. The reference sample was prepared by the same procedure as the samples used in the study, and was thoroughly characterized by X-ray diffractometry, transmission electron microscopy and energy dispersive spectroscopy in scanning electron microscopy. Using this reference sample the elemental sensitivity factors relative to Si were found for both techniques, which enable us to obtain the elemental depth distributions for the studied samples. Good agreement between the results obtained by EDS/TEM, AES and supplementary techniques was found.

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Effect of impurities on initial stages of phase formation for the system of Ti deposited on (001) Si–Ge layers

Cited by 4 publications

References 18 publications

Thermal stability of Pt Schottky contacts to 4H–SiC

Thermal stability of Pt Schottky contacts to 4H–SiC

Influence of Annealing Environment and Film Thickness on the Phase Formation in the Ti/Si(100) and (Ti +Si)/Si(100) Thin Film Systems

Quantitative Analysis of Ti-Si-Ge/Si-Ge/Si Structures by EDS and AES

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