Effect of impurities on dynamic dragging of dislocations

Нацик, В. Д.; Chishko, K. A.

doi:10.1002/crat.2170190606

Cited by 24 publications

(10 citation statements)

References 2 publications

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“…Its boundaries are defined by the inequalities (bc/v) l L, if l L, and (bc/v) L l, if L l. In this range the drag force is not sensitive to the presence of spectrum gap, and, for the same in Ref. 7, it is inversely proportional to the dislocation velocity…”

Section: Model and Calculationmentioning

confidence: 95%

Dynamic Drag of Dislocation by Point Defects in Near-Surface Crystal Layer

Малашенко

2009

Mod. Phys. Lett. B

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Section: Model and Calculationmentioning

confidence: 95%

Dynamic Drag of Dislocation by Point Defects in Near-Surface Crystal Layer

Малашенко

2009

Mod. Phys. Lett. B

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“…when the dislocation kinetic energy is greater than the energy of dislocation interaction with the impurities YUob-lno, where U, is the energy of dislocation bonding to the impurity atom. According t o [4], for the centre of dilatation lJ, N p&. Making use of this expression rn x $2 ,pb2c;2 for the evaluation of the dislocation mass we obtain the applicability condition for our model in the form w > ct(no&)lI2.…”

Section: (21)mentioning

confidence: 95%

“…Here no is the dimensionless concentration of defects, no x nb3 (see [4]). At velocities v > v o = d/x the function @(x) ==x2 and the deceleration force is proportional to 1:-l which is in agreement with the results of [ 2 to 41.…”

Section: (I) O Z # ( P ) =mentioning

confidence: 99%

Self‐Consistent Description of the Effect of Point Defects on Spectrum and Dynamic Deceleration of Dislocations

Малашенко

Sobolev

Khudik

1987

Physica Status Solidi (b)

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A self-consistent equation of dislocation motion in elastic fields created by defects is obtained. The deoeleration force value is calculated due to defect collisions and it is shown to have a quasiviscous character under low velocities.IIonyaeao caMocornacoBaHHoe ypasweme nsxrnems micnoIiaqm B ynpyrlzx IIOJIHX, C O~~~H H~I X ne#eKTaMn. BbIYlzcneHa BenaYaHa cam1 Toplwomewm 351 cYeT CTOJIKOHO-Benax c ne+exTaMn II no~a3aw0, TO n p~ H H~K~X c~o p o c~~x owa mteeT ~s a a a n~a~n i j r xapamep.

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“…Additional features in the behavior of dislocations in crystals appear in the presence of a magnetic field (see [2][3][4]). The experiments show that the application of a magnetic field can noticeably change the plastic properties of crystals.…”

Section: Introductionmentioning

confidence: 99%

“…For example, under a simultaneous influence of a weak magnetic field and constant electric current in the case of silicon crystal deformation, a significant decrease of plasticity is detected [2]. In [3], it has been shown that the dynamic deceleration of dislocations takes place in the case of their movement in the metals under the presence of a magnetic field. In [4], the deformation fields in the blocks of an X-ray interferometer under the constant magnetic field is investigated.…”

Section: Introductionmentioning

confidence: 99%

Investigating the Impact of an External Influence on the Dynamic Behavior of Dislocations in Silicon Crystals

Drmeyan

Mirzoyan

2021

Proceedings Metallurgy, Material Science, Mining Engineering

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The results of studying of the influence of a constant magnetic field on the dynamic behavior of dislocations in the crystalline block of an interferometer subsequently subjected to uniaxial mechanical tensile stress along the crystallographic axis of silicon are presented. The periodicity of the dilatation moire image after these influences, the average means free path of a dislocation in a crystal (block), the amount of slip, the average density of dislocations along the slip line, the relative deformation, and Young's modulus are calculated. To study the effect of a stable magnetic field on the dynamic behavior of dislocations in silicon crystals, a special three-block X-ray interferometer was fabricated in one of the blocks, and dislocations were introduced using the technique proposed by us. The experiments were carried out for various values of the magnetic field induction and mechanical stress. It is shown that the sequential action of these external influences leads to an increase in the starting stress, a decrease in the velocity of dislocation movement, a delay in the onset of dislocation movement, and the appearance of a hardening phenomenon. Experiments show that the displacement mobility characteristics are especially sensitive when the modulus of the magnetic induction vector reaches a certain threshold value for a given sample. It was shown that, in a sample containing silicon dislocations, the magnetic memory that appears after storage in a magnetic field is short-lived. It is found that the speed of movement of a dislocation in a magnetic field processed by a magnetic field, "then" subjected to mechanical stress (stretching), changes, but in practice the energy of its activation does not change. A theoretical analysis of the above experimental results is carried out, their scientific substantiation is given, all the factors associated with the phenomena observed in experiments are revealed.

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Effect of impurities on dynamic dragging of dislocations

Cited by 24 publications

References 2 publications

Dynamic Drag of Dislocation by Point Defects in Near-Surface Crystal Layer

Dynamic Drag of Dislocation by Point Defects in Near-Surface Crystal Layer

Self‐Consistent Description of the Effect of Point Defects on Spectrum and Dynamic Deceleration of Dislocations

Investigating the Impact of an External Influence on the Dynamic Behavior of Dislocations in Silicon Crystals

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