Effect of implantation of Sm+ ions into RF sputtered ZnO thin film

Otieno, Francis; Airo, Mildred; Njoroge, E.G.; Erasmus, Rudolph M.; Ganetsos, Theodore; Quandt, Alexander; Wamwangi, Daniel; Billing, David G.

doi:10.1063/1.5093586

Cited by 10 publications

(2 citation statements)

References 30 publications

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“…The average root mean square (RMS) roughness of the pristine film is 2.10 nm and for Fe 1E14 , it is found at 2.71 nm. This roughness increment is attributed to the formation of microvoid structure at lower fluence [38]. With a further increase in fluence, the RMS roughness value decreases up to 0.44 nm.…”

Section: Morphological Studiesmentioning

confidence: 88%

Tunability of bandgap from UV to visible region by transition metal ion implantation in CeO₂ and their electronic structures

et al. 2023

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The present report examines the tunability of optical band gap by 150 keV Fe ion implantation in cerium oxide (CeO2) thin films and their electronic structures. X-ray diffraction (XRD) confirms the stable FCC structure and these films lose their crystalline nature with increasing ion fluences. Atomic force microscopy (AFM) shows the morphology changes. Raman measurement exhibits the presence of defect states. UV-Vis spectroscopy reveals that the optical band gap reduces from 3.14 eV to 2.70 eV. These results are well correlated with the electronic structure studies from the X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The XPS indicates the existence of Ce3+ due to the replacement of Fe3+ which reduces the Ce4+ to Ce3+ ions. XAS at the Ce-M4,5 edge reveals the change in Ce4+→Ce3+ with Fe ion fluence and the O-K edge spectra show that the vacancies are introduced after Fe ion implantation. The edge shifting of the O-K edge confirmed the presence of Ce4+-VO-Ce3+ and Ce3+-VO-Fe3+ networks in Fe-implanted thin films. This reversible ability enables the CeO2-based nanomaterial for energy and environmental-related applications.

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Section: Morphological Studiesmentioning

confidence: 88%

Tunability of bandgap from UV to visible region by transition metal ion implantation in CeO₂ and their electronic structures

et al. 2023

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“…In addition to defect-mediated luminescence, highly luminescent rare-earth elements such as Sm, Tb, and Gd can successfully be implanted in ZnO nanostructured films to make them excellent and efficient luminescent material. − Figure a shows the digital photographs showing excellent visible luminescence from unimplanted and Gd-implanted ZnO thin films followed by annealing in a vacuum at 750 °C, while Figure b represents the corresponding PL spectrum …”

Section: Properties Of Implanted Znomentioning

confidence: 99%

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Das

Basak

2021

ACS Appl. Electron. Mater.

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Unlike the majority of the silicon-based electronic devices, optoelectronic devices are predominantly made using III–V and II–VI semiconductor compounds and their alloys because of their direct bandgap. Among these, zinc oxide (ZnO) is a multifunctional wide bandgap II–VI semiconductor material that has distinctive properties, such as large excitonic binding energy, high-sensitivity, nontoxicity, and good compatibility, which favors it to be considered for various optoelectronic applications including photoelectrochemical (PEC) water splitting, light-emitting diodes (LEDs), photovoltaics, and photodetectors. Though the research concentrated on ZnO started many decades ago, the renewed interest is rekindled only with the availability of high-quality single-crystal substrates, easy growth techniques of various nanostructures, and reports on p-type ZnO. Therefore, ZnO is being treated as a concentrated research focus during the last two decades by researchers encompassing a vast field starting from luminescent materials, energy storage and conversion, to biomedical sensors, and so on. Ion beam irradiation is a fruitful approach to modify the properties of semiconducting oxides by introducing not only impurities but also defects, strains, structural transitions, and others. The necessity of a timely in-depth and critical review of the progress on ion implantation in ZnO is the origin of this Review, which focuses on the recent implantation efforts in nanostructured ZnO thin films as well as single crystals. In the beginning, with an introduction to the general principles of ion implantation, this Review presents interactions and distribution of implantation-induced defects in ZnO. Next, comprehensive analyses on the influence of ion implantation on the optical, electrical properties, and optoelectronic applications including PEC water splitting and LEDs have been revealed. Most importantly, in each section from a “state-of-the-art” of the domain, some critical connections have been provided between the results of the theoretical simulations of the implanted ion-induced defects and the reported data, which in particular would be able to offer significant insights for both theoretical and experimental research community working with the oxide semiconductors. At the end, a summary with future directions for utilizing ion implantation for achieving ZnO thin-film-based high-performance devices has been presented. By including a sufficient breadth and depth of literature coverage in this Review, we believe that it would also tend to reveal the inconsistencies in the extant body of research.

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Tuning the Optical Properties of ZnO Nanorods Through Gd Doping

Satpathy

Panigrahi

Biswal

et al. 2022

Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci.

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Effect of implantation of Sm+ ions into RF sputtered ZnO thin film

Cited by 10 publications

References 30 publications

Tunability of bandgap from UV to visible region by transition metal ion implantation in CeO₂ and their electronic structures

Tunability of bandgap from UV to visible region by transition metal ion implantation in CeO₂ and their electronic structures

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Tuning the Optical Properties of ZnO Nanorods Through Gd Doping

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Effect of implantation of Sm+ ions into RF sputtered ZnO thin film

Cited by 10 publications

References 30 publications

Tunability of bandgap from UV to visible region by transition metal ion implantation in CeO2 and their electronic structures

Tunability of bandgap from UV to visible region by transition metal ion implantation in CeO2 and their electronic structures

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Tuning the Optical Properties of ZnO Nanorods Through Gd Doping

Contact Info

Product

Resources

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Tunability of bandgap from UV to visible region by transition metal ion implantation in CeO₂ and their electronic structures

Tunability of bandgap from UV to visible region by transition metal ion implantation in CeO₂ and their electronic structures