2011
DOI: 10.1016/j.tsf.2011.05.079
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Effect of impinging ion energy on the substrates during deposition of SiOx films by radiofrequency plasma enhanced chemical vapor deposition process

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Cited by 13 publications
(5 citation statements)
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“…The roughness induced by plasma treatment was higher for O 2 plasma treated samples than for Ar plasma treated ones. This phenomenon was already described in the literature as due to the presence of highly reactive oxygen species in higher amount for O 2 plasma treated samples, which are key players in the surface etching and improvement of the surface hydrophilicity. Moreover, Arik et al showed, in the case of the plasma treatment of PVA/PAA nanofibers, a prevention of bacterial adhesion and growth due to the hydrophilicity enhancement after plasma treatment .…”
Section: Cold Plasma Treatment Of Electrospun Nanofibersmentioning
confidence: 68%
“…The roughness induced by plasma treatment was higher for O 2 plasma treated samples than for Ar plasma treated ones. This phenomenon was already described in the literature as due to the presence of highly reactive oxygen species in higher amount for O 2 plasma treated samples, which are key players in the surface etching and improvement of the surface hydrophilicity. Moreover, Arik et al showed, in the case of the plasma treatment of PVA/PAA nanofibers, a prevention of bacterial adhesion and growth due to the hydrophilicity enhancement after plasma treatment .…”
Section: Cold Plasma Treatment Of Electrospun Nanofibersmentioning
confidence: 68%
“…The Si2p XPS spectra (energy range, 114–94 eV) of films were measured and deconvoluted, as shown in Figure 6. These spectra reveal the contributions of SiO 2 (102.1 eV), Si–O 3 (102.8 eV), Si–O 4 (103.4 eV), and Si–OH (104.3 eV) groups to the organosilicon thin films 32–35 . With the addition of nitrogen gas into the cyclonic APP deposition, the composition of the Si‐O 4 (103.4 eV) group increased.…”
Section: Resultsmentioning
confidence: 98%
“…The Si 2p peak has been fitted with four peaks corresponding to (CH 3 ) 2 SiO 2 (102.1 eV), Si(CH 3 ) 4 (100.9 eV), (CH 3 ) 3 SiO (101.5 eV), and SiO 4 (103.4 eV). [30][31][32] The HMDSO plasma-jet-deposited films have a high proportion of (CH 3 ) 2 SiO 2 units, suggesting that the chemical structure is relatively unlike that of a linear organosilicon polymer. This implies that the HMDSO monomer rapidly penetrates the plasma jet and may dissociated by electron impact and Penning dissociation.…”
Section: Resultsmentioning
confidence: 99%