2018
DOI: 10.1088/2053-1591/aad728
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Effect of IDE placement on response in metal oxide gas sensors

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Cited by 7 publications
(2 citation statements)
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“…To acquire the best sensing characteristics, the IDEs structure was optimized by considering the configuration of the electrodes, electrode spacing, and sensor geometry. [38][39][40] A commercial Ag NP dispersion (30-35 wt.% in triethylene glycol monomethyl ether, Sigma-Aldrich) was used to print the IDEs with 50 µm finger width and 42 µm gap. The ink cartridge containing the Ag NPs dispersion and printing stage were kept at 40 and 60 °C, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…To acquire the best sensing characteristics, the IDEs structure was optimized by considering the configuration of the electrodes, electrode spacing, and sensor geometry. [38][39][40] A commercial Ag NP dispersion (30-35 wt.% in triethylene glycol monomethyl ether, Sigma-Aldrich) was used to print the IDEs with 50 µm finger width and 42 µm gap. The ink cartridge containing the Ag NPs dispersion and printing stage were kept at 40 and 60 °C, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…In this case, the enhanced gas sensor response is related to the fact that the majority of reactions between the gas and the sensing film occur on the surface of the sensing layer, therefore the top electrode provides a more accurate reading of the resistance changes compared to bottom-placed electrodes. The electrode position becomes even more notable when the thickness of the sensing film is higher than 100 nm since, in this case, the overall sensor response is highly dependent on the surface changes [164]. In this manner, interdigital and top-bottom electrode designs with controlled electrode widths and electrode gaps in the nano-range are the preferable sensor configurations to obtain high-sensitivity semiconductor metal oxide sensors.…”
Section: Configuration and Geometry Of Metal Oxide Sensorsmentioning
confidence: 99%