Effect of i-ZnO seed layer on the properties of electrodeposited p-Cu<sub>2</sub>O/n-ZnO/FTO heterojunction thin films

Kara, Rania; Siab, R.; Azizi, A.

doi:10.1088/2053-1591/ab539f

Cited by 11 publications

(7 citation statements)

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“…XRD patterns of the PSi/Cu 2 O/ZnO sample prepared for 80 min reveal that the crystal structure of ZnO phases is polycrystalline hexagonal wurtzite with (100), (002), (101), (102), (110), and (103) orientations corresponding to 2θ = 31.76°, 34.41°, 36.23°, 47.50°, 56.56°, and 62.84° according to JCPDS card No. 01-074-0534. ,, It has been also found that ZnO nanostructures have a polycrystalline, hexagonal wurtzite crystal structure, and its preferential orientation changed from (102) to (002) with increasing deposition time. This might be attributed to the fact that ZnO deposition on the Cu 2 O nanostructure increased with increasing deposition time.…”

Section: Resultsmentioning

confidence: 99%

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Çetinel

Utlu

2023

ACS Omega

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Cu2O/ZnO heterojunction was fabricated on porous silicon (PSi) by a two-step electrochemical deposition technique with changing current densities and deposition times, and then the PSi/Cu2O/ZnO nanostructure was systematically investigated. SEM investigation revealed that the morphologies of the ZnO nanostructures were significantly affected by the applied current density but not those of Cu2O nanostructures. It was observed that with the increase of current density from 0.1 to 0.9 mA/cm2, ZnO nanoparticles showed more intense deposition on the surface. In addition, when the deposition time increased from 10 to 80 min, at a constant current density, an intense ZnO accumulation occured on Cu2O structures. XRD analysis showed that both the polycrystallinity and the preferential orientation of ZnO nanostructures change with the deposition time. XRD analysis also revealed that Cu2O nanostructures are mostly in the polycrystalline structure. Several strong Cu2O peaks were observed for less deposition times, but those peaks diminish with increasing deposition time due to ZnO contents. According to XPS analysis, extending the deposition time from 10 to 80 min, the intensity of the Zn peaks increases, whereas the intensity of the Cu peaks decreases, which is verified by the XRD and SEM investigations. It was found from the I–V analysis that the PSi/Cu2O/ZnO samples exhibited rectifying junction and acted as a characteristical p-n heterojunction. Among the chosen experimental parameters, PSi/Cu2O/ZnO samples obtained at 0.5 mA current density and 80 min deposition times have the best junction quality and defect density.

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Section: Resultsmentioning

confidence: 99%

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Çetinel

Utlu

2023

ACS Omega

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“…42,43 E X E 0.5E 1 Thus, the photocatalytic activity of Cu 2 O is enhanced. 45,46 The mechanism of enhancing the photocatalytic performance of Cu 2 O by forming heterojunctions between ZnO and Cu 2 O is shown in Fig. 11.…”

Section: Resultsmentioning

confidence: 99%

Preparation of Novel ZnO/Cu₂O Heterojunctions Composite Film by Codeposition Method and Their Enhanced Photocatalytic Performance Analysis

Wei

et al. 2021

J. Electrochem. Soc.

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IIn this paper, a codeposition method is used to prepare ZnO/Cu2O composite film with a heterojunction structure in one step. The microstructure and photoelectric properties of the prepared ZnO/Cu2O composite film are characterized and analyzed, and its photocatalytic performance is evaluated. Compared with pure the Cu2O film, the composite film exposes more (111) crystal planes, and has a smaller impedance and a larger photocurrent and open circuit voltage value. These findings indicate that the ZnO/Cu2O composite film exhibits excellent photogenerated carrier separation and migration efficiencies. Among the prepared samples, M2 demonstrates the highest photocatalytic and recycling performance. The calculation of the band position shows that the Fermi level of the composite film exhibits a significant shift compared to that of the pure Cu2O film. The analysis shows that the decrease in the recombination probability of photogenerated carriers caused by the shift of the Fermi level and formation of an internal electric field is the main factor for the significant enhancement in the Cu2O photocatalytic performance. This article provides a novel method and idea to realize the efficient removal of organic dye pollutants in sewage.

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“…From these gures, all the samples showed a single shoulder onset reaffirming the absence of secondary phases in the electrodeposited samples. 48 The absence of sharpness in the optical absorbance feature was due to the direct forbidden gap nature of the deposits. From Fig.…”

Section: Resultsmentioning

confidence: 99%

Synthesis and characterization of Mg-doped ZnO thin-films electrochemically grown on FTO substrates for optoelectronic applications

2020

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Effect of i-ZnO seed layer on the properties of electrodeposited p-Cu₂O/n-ZnO/FTO heterojunction thin films

Cited by 11 publications

References 50 publications

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Preparation of Novel ZnO/Cu₂O Heterojunctions Composite Film by Codeposition Method and Their Enhanced Photocatalytic Performance Analysis

Synthesis and characterization of Mg-doped ZnO thin-films electrochemically grown on FTO substrates for optoelectronic applications

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Effect of i-ZnO seed layer on the properties of electrodeposited p-Cu2O/n-ZnO/FTO heterojunction thin films

Cited by 11 publications

References 50 publications

Preparation and Characterization of Electrochemically Deposited Cu2O/ZnO Heterojunctions on Porous Silicon

Preparation and Characterization of Electrochemically Deposited Cu2O/ZnO Heterojunctions on Porous Silicon

Preparation of Novel ZnO/Cu2O Heterojunctions Composite Film by Codeposition Method and Their Enhanced Photocatalytic Performance Analysis

Synthesis and characterization of Mg-doped ZnO thin-films electrochemically grown on FTO substrates for optoelectronic applications

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Effect of i-ZnO seed layer on the properties of electrodeposited p-Cu₂O/n-ZnO/FTO heterojunction thin films

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Preparation of Novel ZnO/Cu₂O Heterojunctions Composite Film by Codeposition Method and Their Enhanced Photocatalytic Performance Analysis