Effect of Hydrostatic Pressure on the Static Permittivity of Germanium

Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

“…The study of the nature of clusters of impurity atoms formed in the bulk of semiconductor single crystals, as well as the effect of various external influences on them, allows to purposefully control the electrophysical properties of semiconductor materials. As it is known, external pressure significantly affects the electrophysical parameters of semiconductor materials and devices based on them [1][2][3][4]. In order to develop technologies for obtaining semiconductor materials with high sensitivity to external pressure, it is necessary to thoroughly study the laws of physical phenomena occurring in the bulk of a semiconductor under various conditions of its manufacture.…”