Effect of hydrogen radical on decomposition of chlorosilane source gases

Sumiya, Masatomo; Akizuki, Tomohiro; Itaka, Kenji; Kubota, Mamoru; Tsubouchi, K.; Ishigaki, Takamasa; Koinuma, Hideomi

doi:10.1088/1742-6596/441/1/012003

Cited by 3 publications

(4 citation statements)

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“…To improve the Si yield of the Siemens method, we have focused on hydrogen radicals (H-radicals) as a reducing agent [5,6]. H-radicals have been used in some chemical vapor deposition processes, including those leading to the deposition of amorphous or polycrystalline Si [7,8] and diamond thin films [9,10].…”

Section: Introductionmentioning

confidence: 99%

“…H-radicals have been used in some chemical vapor deposition processes, including those leading to the deposition of amorphous or polycrystalline Si [ 7 , 8 ] and diamond thin films [ 9 , 10 ]. Because an H-radical is more reactive than an H 2 molecule, the use of H-radicals can lower the Δ G of the reduction of SiHCl 3 and SiCl 4 [ 5 ] and suppress the pyrolysis of SiHCl 3 . For H-radicals to be used in the Siemens method, they should be remotely supplied into the bell jar (reaction chamber) to prevent contaminants from the source gas or synthesized Si from affecting the H-radical generation process.…”

Section: Introductionmentioning

confidence: 99%

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Effective silicon production from SiCl₄ source using hydrogen radicals generated and transported at atmospheric pressure

Okamoto

Sumiya

Nakamura

et al. 2020

Science and Technology of Advanced Materials

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In the Siemens method, high-purity Si is produced by reducing SiHCl 3 source gas with H 2 ambient under atmospheric pressure. Since the pyrolysis of SiHCl 3 , which produces SiCl 4 as a byproduct, occurs dominantly in the practical Siemens process, the Si yield is low (~30%). In the present study, we generated hydrogen radicals (H-radicals) at pressures greater than 1 atm using tungsten filaments and transported the H-radicals into a reactor. On the basis of the absorbance at 600 nm of WO 3-glass exposed to H-radicals in the reactor, we observed that H-radicals with a density of ~1.1 × 10 12 cm −3 were transported approximately 30 cm under 1 atm. When SiCl 4 was supplied as a source into the reactor containing H-radicals and allowed to react at 850°C or 900°C, Si was produced more efficiently than in reactions conducted under H 2 ambient. Because the H-radicals can effectively reduce SiCl 4 , which is a byproduct in the Siemens method, their use is expected to increase the Si yield for this method.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effective silicon production from SiCl₄ source using hydrogen radicals generated and transported at atmospheric pressure

Okamoto

Sumiya

Nakamura

et al. 2020

Science and Technology of Advanced Materials

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“…To improve the Si yield, we have previously proposed using a hydrogen radical instead of H 2 gas. 11) The thermodynamic calculation of the Gibbs free energy suggests that SiHCl 3 can be reduce at lower temperatures and that SiCl 4 can be also reduced when reacting with a hydrogen radical. 11) Indeed, the effect of the hydrogen radical on the decomposition of chlorosilane sources has been confirmed using hydrogen radicals generated by pulsed thermal plasma under 2.7 Pa. 11) For the practical application of hydrogen radicals in the Siemens process, however, it is necessary that the hydrogen radical is supplied remotely to the reaction chamber.…”

Section: Introductionmentioning

confidence: 99%

“…11) The thermodynamic calculation of the Gibbs free energy suggests that SiHCl 3 can be reduce at lower temperatures and that SiCl 4 can be also reduced when reacting with a hydrogen radical. 11) Indeed, the effect of the hydrogen radical on the decomposition of chlorosilane sources has been confirmed using hydrogen radicals generated by pulsed thermal plasma under 2.7 Pa. 11) For the practical application of hydrogen radicals in the Siemens process, however, it is necessary that the hydrogen radical is supplied remotely to the reaction chamber. For this purpose, we applied the tungsten (W) filament used for improving the high growth rate and film quality such as amorphous silicon, 12,13) diamond films, 14,15) and polymer films deposited on flexible film.…”

Section: Introductionmentioning

confidence: 99%

Density evaluation of remotely-supplied hydrogen radicals produced via tungsten filament method for SiCl₄ reduction

Dahmani

Okamoto

Tsutsumi

et al. 2018

Jpn. J. Appl. Phys.

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Effect of the hydrogen radical on the reduction of a silicon tetrachloride (SiCl 4 ) source was studied. The hydrogen radicals were generated using a tungsten (W) filament in a generation chamber, and were remotely supplied to another reaction chamber. The density of the hydrogen radical was estimated from the optical transmittance of 600-nm-wavelength light through phosphate glass doped with tungsten oxide (WO 3 ). Lifetime of the hydrogen radical seemed sufficiently long, and its density as supplied to the reaction chamber was estimated to be on the order of 10 12 cm %3 . Signal intensity of the peak corresponding to SiCl 4 (m/z = 170) detected by quadrupole-mass measurement was confirmed to decrease owing to the reaction with the remotely-supplied hydrogen radical. This indicates the possibility that chemically-stable SiCl 4 , as one of the by-products of the Siemens process, can be reduced to produce silicon.

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Catalyst-free synthesis of β-SiC polyhedra and α-SiC nano-platelets by RF thermal plasma

Yao

Jin

et al. 2014

Materials Letters

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Effect of hydrogen radical on decomposition of chlorosilane source gases

Cited by 3 publications

References 9 publications

Effective silicon production from SiCl₄ source using hydrogen radicals generated and transported at atmospheric pressure

Effective silicon production from SiCl₄ source using hydrogen radicals generated and transported at atmospheric pressure

Density evaluation of remotely-supplied hydrogen radicals produced via tungsten filament method for SiCl₄ reduction

Catalyst-free synthesis of β-SiC polyhedra and α-SiC nano-platelets by RF thermal plasma

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Effect of hydrogen radical on decomposition of chlorosilane source gases

Cited by 3 publications

References 9 publications

Effective silicon production from SiCl4 source using hydrogen radicals generated and transported at atmospheric pressure

Effective silicon production from SiCl4 source using hydrogen radicals generated and transported at atmospheric pressure

Density evaluation of remotely-supplied hydrogen radicals produced via tungsten filament method for SiCl4 reduction

Catalyst-free synthesis of β-SiC polyhedra and α-SiC nano-platelets by RF thermal plasma

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Effective silicon production from SiCl₄ source using hydrogen radicals generated and transported at atmospheric pressure

Effective silicon production from SiCl₄ source using hydrogen radicals generated and transported at atmospheric pressure

Density evaluation of remotely-supplied hydrogen radicals produced via tungsten filament method for SiCl₄ reduction