Effect of Hydrogen Peroxide on the Stability of Undoped p-Type ZnO Prepared by Magnetron Sputtering

Effects of annealing on optical and structural properties of zinc oxide nanocrystals

“…This is consistent with the results in our recent work (). Annealing in O leads to the elimination of oxygen vacancies and can promote the formation of oxygen interstitials, while Zn vapor annealing results in the formation of oxygen vacancies due to rapid coalescence of NCs in oxygen‐deficient environment . The Raman frequency of the E mode almost remains the same in the case of O’ and Ar‐annealed samples, meaning that no change in the strain of these samples is observed.…”

Effects of O2 fraction on the properties of Al-doped ZnO thin films treated by high-energy electron beam irradiation

“…The FWHM values for samples prepared by higher O 2 fraction were higher than those for samples prepared by O 2 fraction of 0, indicating that worse crystallinity was observed in higher O 2 fraction samples. Taking into consideration that the d-value of the bulk ZnO is 0.26033 nm, all films which have higher d-value than the bulk were found to have compressive stress [32]. Hence, Fig.…”

Influence of Sputtering Pressure on the Conductivity and Transparency of Aluminum-Doped Zinc Oxide Films

“…Various deposition systems have been employed for the deposition of AZO films including a sol-gel process, radio frequency (RF)magnetron sputtering, pulsed laser deposition, and electron beam evaporation [14][15][16][17][18][19]. Among them, RF-magnetron sputtering is a popular choice due to its low cost, simplicity, capability to deposit highly crystalline films that are uniform, dense, and strongly adherent, and low operating temperature [20,21]. However, achieving a high figure of merit in AZO films at ambient temperature, which could circumvent degradation of the sensitive photoresist or plastic substrates used in opto-electric devices (e.g., LEDs), remains a challenge.…”