Effect of hydrogen on the growth of MoS2 thin layers by thermal decomposition method

Qi, Fei; Li, Pingjian; Chen, Yuanfu; Zheng, Binjie; Liu, Xingzhao; Lan, Feifei; Lai, Zhanping; Xu, Yongkuan; Liu, Jingbo; Zhou, Jinhao; He, Jian; Zhang, Wanli

doi:10.1016/j.vacuum.2015.05.023

Cited by 31 publications

(14 citation statements)

References 24 publications

(24 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Due to its excellent properties, molybdenum disulfide (MoS 2 ) is being investigated as one typical kind of two-dimensional materials to develop next-generation microelectronic devices and optoelectronic devices [1–5]. Unlike graphene, MoS 2 has obvious band gap and its band gap decreases with increasing layer numbers [6].…”

Section: Introductionmentioning

confidence: 99%

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

et al. 2017

View full text Add to dashboard Cite

Molybdenum disulfide (MoS2) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS2/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS2/GaAs heterojunctions is investigated. The results show that a large LPE can be obtained in the MoS2/n-GaAs heterojunction. The LPE exhibits a linear dependence on the position of the laser illumination and the considerably high sensitivity of 416.4 mV mm− 1. This sensitivity is much larger than the values in other reported MoS2-based devices. Comparatively, the LPE in the MoS2/p-GaAs heterojunction is much weaker. The mechanisms to the LPE are unveiled by constructing the energy-band alignment of the MoS2/GaAs heterojunctions. The excellent LPE characteristics make MoS2 films combined with GaAs semiconductors promising candidates for the application of high-performance position-sensitive detectors.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2334-z) contains supplementary material, which is available to authorized users.

show abstract

Section: Introductionmentioning

confidence: 99%

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

et al. 2017

View full text Add to dashboard Cite

show abstract

“…The thermal annealing method was used for the synthesis of MoS 2 [27]. The different concentrations of ammonium tetrathiomolybdate (0.5 to 1.5 M) was prepared in dimethylformamide (DMF) solution and subsequently ultra-sonicated for 30 min [28]. Then, the prepared precursor solution was spin coated (500 rpm for 30 s and then 1500 rpm for 45 s) on a fluorine-doped tin oxide (FTO) substrates and heated at 80 °C for 20 min in a vacuum oven.…”

Section: Synthesis Of Mosmentioning

confidence: 99%

“…Then, the prepared precursor solution was spin coated (500 rpm for 30 s and then 1500 rpm for 45 s) on a fluorine-doped tin oxide (FTO) substrates and heated at 80 °C for 20 min in a vacuum oven. Afterward, the spin-coated MoS 2 film was transferred into a tube furnace and annealed at 450 °C for one h under Ar: H 2 (8:2) atmosphere to obtain MoS 2 thin film [28]. Importantly, H 2 gas plays a critical role to avoid creating MoO 3 during the growth process and improves the MoS 2 film quality.…”

Section: Synthesis Of Mosmentioning

confidence: 99%

“…Importantly, H 2 gas plays a critical role to avoid creating MoO 3 during the growth process and improves the MoS 2 film quality. Equation 1shows the thermal decomposition reaction involved for synthesis the MoS 2 from the initial precursor [28]. 4 For packing MoS 2 /Si-HJ photocathode, Ga-In eutectic alloy (Sigma-Aldrich) was deposited on the electrode to make an Ohmic contact.…”

Section: Synthesis Of Mosmentioning

confidence: 99%

See 1 more Smart Citation

Enhanced photoelectrochemical hydrogen production efficiency of MoS₂-Si heterojunction

Alarawi

Vinoth

et al. 2019

Opt. Express

View full text Add to dashboard Cite

Photoelectrochemical water splitting is one of the viable approaches to produce clean hydrogen energy from water. Herein, we report MoS 2 /Si-heterojunction (HJ) photocathode for PEC H 2 production. The MoS 2 /Si-HJ photocathode exhibits exceptional PEC H 2 production performance with a maximum photocurrent density of 36.33 mA/cm 2 , open circuit potential of 0.5 V vs. RHE and achieves improved long-term stability up to 10 h of reaction time. The photocurrent density achieved by MoS 2 /Si-HJ photocathode is significantly higher than most of the MoS 2 coupled Si-based photocathodes reported elsewhere, indicating excellent PEC H 2 production performance.

show abstract

“…Molybdenum disulfide (MoS 2 ), as one typical candidate of graphene analogues and a member of the transition metal dichalcogenides (TMDs), has recently drawn tremendous attention due to its excellent properties [6–10]. Structurally, each MoS 2 unit layer is consisted of covalently bonded Mo–S atoms and the neighbor layers attach each other by van der Waals forces.…”

Section: Introductionmentioning

confidence: 99%

Highly Enhanced H2 Sensing Performance of Few-Layer MoS2/SiO2/Si Heterojunctions by Surface Decoration of Pd Nanoparticles

Hao

Liu

et al. 2017

Nanoscale Res Lett

View full text Add to dashboard Cite

A novel few-layer MoS2/SiO2/Si heterojunction is fabricated via DC magnetron sputtering technique, and Pd nanoparticles are further synthesized on the device surface. The results demonstrate that the fabricated sensor exhibits highly enhanced responses to H2 at room temperature due to the decoration of Pd nanoparticles. For example, the Pd-decorated MoS2/SiO2/Si heterojunction shows an excellent response of 9.2 × 103% to H2, which is much higher than the values for the Pd/SiO2/Si and MoS2/SiO2/Si heterojunctions. In addition, the H2 sensing properties of the fabricated heterojunction are dependent largely on the thickness of the Pd-nanoparticle layer and there is an optimized Pd thickness for the device to achieve the best sensing characteristics. Based on the microstructure characterization and electrical measurements, the sensing mechanisms of the Pd-decorated MoS2/SiO2/Si heterojunction are proposed. These results indicate that the Pd decoration of few-layer MoS2/SiO2/Si heterojunctions presents an effective strategy for the scalable fabrication of high-performance H2 sensors.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2335-y) contains supplementary material, which is available to authorized users.

show abstract

Effect of hydrogen on the growth of MoS2 thin layers by thermal decomposition method

Cited by 31 publications

References 24 publications

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

Enhanced photoelectrochemical hydrogen production efficiency of MoS₂-Si heterojunction

Highly Enhanced H2 Sensing Performance of Few-Layer MoS2/SiO2/Si Heterojunctions by Surface Decoration of Pd Nanoparticles

Contact Info

Product

Resources

About

Effect of hydrogen on the growth of MoS2 thin layers by thermal decomposition method

Cited by 31 publications

References 24 publications

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

Enhanced photoelectrochemical hydrogen production efficiency of MoS2-Si heterojunction

Highly Enhanced H2 Sensing Performance of Few-Layer MoS2/SiO2/Si Heterojunctions by Surface Decoration of Pd Nanoparticles

Contact Info

Product

Resources

About

Enhanced photoelectrochemical hydrogen production efficiency of MoS₂-Si heterojunction