Effect of Hydrogen Annealing on Performances of BN-Based RRAM

Abstract

BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high density, and reliability. However, the presence of defects and trap states in BN-based RRAM can limit its performance and reliability in aerospace applications. As a result, higher set voltages of 1.4 and 1.23 V were obtained for non-annealed and nitrogen-annealed BN-based RRAM, respectively, but lower set voltages of 1.06 V were obtained for hydrogen-annealed BN-based RRAM. In addition, the hydrogen-annealed BN-based RRAM showed an on/off ratio of 100, which is 10 times higher than the non-annealed BN-based RRAM. We observed that the LRS changed to the HRS state before 10,000 s for both the non-annealed and nitrogen-annealed BN-based RRAMs. In contrast, the hydrogen-annealed BN-based RRAM showed excellent retention characteristics, with data retained up to 10,000 s.

Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing

“…Recently, nitride-based devices have been studied to create efficient synaptic and memory devices to control accurately conductive paths and metal/semiconductor barriers in these devices [27][28][29]. The amorphous BN thin films have attracted significant attention for memory applications owing to wide-bandgap semiconductors with high-thermal conductivity and chemical stability [30,31]. The integration of BN with RRAM enables the construction of neural network models with a smaller memory footprint and capability for faster inferences [32][33][34].…”