Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films

Control of electronic conduction at an oxide heterointerface using surface polar adsorbates

“…Until now the adsorption of water on LaAlO 3 , particularly on the AlO 2 -terminated LaAlO 3 surface, has been scarcely studied. A water-dipping study showed that, whereas La 2 O 3 is highly hygroscopic, LaAlO 3 only reacts weakly with water 25 . In contrast, the adsorption of water on Al 2 O 3 is well understood.…”

Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application

“…1,2 Alternatively, more efforts have been devoted to seek for materials, which are physically thicker than SiO 2 yet are able to yield high-performance MOS devices at a low leakage current. Among the alternative materials that have been suggested as the substitutes for SiO 2 are those offering dielectric constant (k) values larger than SiO 2 for Si-based MOS devices that include aluminum oxide, 3 yttrium oxide, 1 zirconium oxide, 4 lanthanum oxide, 5 hafnium oxide, 6 cerium oxide, 7 and tantalum oxide. 8,9 A broader attention has been placed particularly on tantalum oxide (Ta 2 O 5 ) due to its wide deployment as a storage dielectric film, 9 owing to its high storage capability in comparison to other high k materials.…”

“…21 Various attempts have been carried out to investigate the outcome of mixing and doping of Hf into Ta 2 O 5 . Majority of the work reported the deployment of Ta and Hf targets at different Ta:Hf power ratios 14,18,22,23,[26][27][28] to obtain the oxide, in which the sputtering process was proceeded with postdeposition annealing (PDA) in annealing ambient (O 2 or N 2 ) at different temperatures (400 C, 600 C, and 700 C) and time (5,10,30, and 60 minutes) in order to transform the as-sputtered film to Hf-doped Ta 2 O 5 . Results divulged that a relatively thin Hf silicate or SiO 2 interfacial layer ($ 2 nm) was formed at the interface regardless of the PDA condition.…”

Preparation and characterisation of aluminium zirconium oxide for metal‐oxide‐semiconductor capacitor

“…Nevertheless, the thermally grown SiO 2 with it slow dielectric constant ( k = 3.9) has been pushed to the pinnacle in electronic performance, owing to the scaling down in the SiO 2 thickness to 1 nm range, which would result in a high leakage current governed by direct tunnelling mechanism 1,6 . In order to overcome this issue with regards to an instability of Si‐based MOS devices, it is essential to substitute the well‐established SiO 2 with materials that are physically thicker, such as high‐ k Al 2 O 3 , 7 Y 2 O 3 , 1,8 ZrO 2 , 9 La 2 O 3 , 10 HfO 2 , 11 and CeO 2 12 as the passivation layers.…”